| Unit Price: | USD 660 - 790 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
Download:
Basic Info
Model No.: YZPST-230B170F62
Brand: YZPST
Place Of Origin: China
VDSmax: 1700V
ID Tc=25℃: 230A
ID Tc=100℃: 200A
VGSmax: -10V/+25V
VGSop: -5V/+20V
TJ TSTG: -40℃+155℃
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 10000
Transportation: Ocean,Land
Supply Ability: 10000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
Ease of paralleling
Absolute Maximum Ratings (TC =25℃ unless otherwise specified)
| Parameter | ||||
| Symbol | Conditions | Value | Unit | |
| Drain-source voltage | VDSmax | 1700 | V | |
| VGS=20V, Tc=25℃ | 230 | |||
| Continuous collector current | ID | VGS=20V, Tc=100℃ | 200 | A |
| Gate- source voltage | VGSmax | Absolute maximum values | -10V/+25V | V |
| Gate-source voltage | VGSop | Recommended operational values | -5V/+20V | V |
| Operating Junction and Storage Temperature | TJ TSTG | -40~+155 | ℃ |
Electrical Characteristics (TC =25℃ unless otherwise specified)
| Parameter | Value | Unit | ||||
| Symbol | Conditions | Min. | Typ. | Max. | ||
| Gate threshold voltage | VGSth | ID =108mA | 2 | 2.6 | 4 | V |
| Zero gate voltage drain current | IDSS | VDS=1700V,VGS=0V | 6 | 600 | uA | |
| Gate-source leakage current | IGSS | VGS=20 V | 1500 | nA | ||
| VGS=20V, IDS=230A | 7.5 | 11.7 | ma | |||
| On state resistance | RDS(on) | VGS=20V, IDS=230A,Tvj=150℃ | 15 | ma | ||
| Input capacitance | Ciss | 21.3 | nF | |||
| Output capacitance | Coss | VGS=0V,VDS=1000V, VAC=25mV f=1MHz | 0.99 | nF | ||
| Reverse transfer capacitance | Crss | 0.04 | nF | |||
| Gate-source charge | QGS | 324 | nC | |||
| Gate-drain charge | QGD | VDS=1200V,VGS = +20V/-5V | 150 | nC | ||
| Total gate charge | QG | ID =300 A | 1158 | nC | ||
| Turn-on delay time | td(on) | 27 | ns | |||
| ID =180A | ||||||
| Rise time | tr | VDS =1200V | 32 | ns | ||
| Turn-off delay time | td(off) | VGS = +20V/-5V | 36 | ns | ||
| Fall time | tf | RG= 2.5a | 10 | ns | ||
| Energy dissipation during turn-on time | ID =180A | |||||
| Eon | VDS =1200V | 1.2 | mJ | |||
| VGS = +20V/-5V | ||||||
| RG= 2.5a | ||||||
| Energy dissipation during turn-off time | Eoff | L=200uH | 2 | mJ | ||
| IF=300A | 1.6 | 1.9 | V | |||
| Diode forward voltage | VSD | IF=300A,Tvj=150℃ | 2.2 | 2.8 | V | |
Module Characteristics (TC =25℃ unless otherwise specified)
| Parameter | Value | |||||
| Symbol | Conditions | Min. | Typ. | Max. | Unit | |
| Case isolation voltage | Visol | t=1min,f=50Hz | 2500 | V | ||
| Maximum junction temperature | Tjmax | 175 | ℃ | |||
| Operating junction temperature | Tvj op | -40 | 150 | ℃ | ||
| Storage temperature | Tstg | -40 | 125 | ℃ | ||
| Module electrodes torque | Mt | Recommended(M6) | 3 | 6 | ||
| Module to heatsink torque | Ms | Recommended(M6) | 3 | 6 | Nm | |
| Weight of module | G | 300 | g | |||
Circuit Diagram
Package Dimensions
Product Categories : Semiconductor Module Devices > IGBT Module
Hot Products
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Contact Now
