| Unit Price: | USD 19.5 - 29 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
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Basic Info
Model No.: YZPST-G100HF120D1
Place Of Origin: China
VCES: 1200V
VGES: ±30V
IC TC = 25°C: 200A
IC TC = 100°C: 100A
ICM: 200A
PD: 430W
Tsc: > 10us
TJ: 150°C
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Transportation: Ocean,Land
Supply Ability: 100000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
UPS Systems
Absolute Maximum Ratings of IGBT
VCES Collector to Emitter Voltage 1200 V VGES Continuous Gate to Emitter Voltage ±30 V TC = 25°C 200 IC Continuous Collector Current TC = 100°C 100 A ICM Pulse Collector Current TJ = 150°C 200 A PD Maximum Power Dissipation (IGBT) TC = 25°C, 430 W tsc > 10 µs Short Circuit Withstand Time Maximum IGBT Junction Temperature 150 °C TJ TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature Range -40 to +125 °C VRRM Repetitive Peak Reverse Voltage Preliminary Data 1200 V TC = 25°C 200 IF Diode Continuous Forward Current TC = 100°C 100 A IFM Diode Maximum Forward Current 200 A
Absolute Maximum Ratings of Freewheeling Diode
| VRRM | Repetitive Peak Reverse Voltage Preliminary Data | 1200 | V | |
| TC = 25°C | 200 | |||
| IF | Diode Continuous Forward Current | TC = 100°C | 100 | A |
| IFM | Diode Maximum Forward Current | 200 | A | |
Switching Characteristics of IGBT
| td(on) | TJ = 25°C | 30 | |||||
| Turn-on Delay Time | ns | ||||||
| TJ = 125°C | 35 | ||||||
| TJ = 25°C | 50 | ||||||
| tr | Turn-on Rise Time | TJ = 125°C | 55 | ns | |||
| TJ = 25°C | 380 | ||||||
| td(off) | Turn-off Delay Time | TJ = 125°C | 390 | ns | |||
| TJ = 25°C | 110 | ||||||
| tf | Turn-off Fall Time | TJ = 125°C | 160 | ns | |||
| VCC = 600V | TJ = 25°C | 4.6 | |||||
| Eon | Turn-on Switching Loss | IC = 100A | TJ = 125°C | 5.7 | mJ | ||
| RG = 5.6Ω | TJ = 25°C | 3.1 | |||||
| Eoff | Turn-off Switching Loss | VGE = ±15V | TJ = 125°C | 5.1 | mJ | ||
| Qg | Total Gate Charge | Inductive Load | TJ = 25°C | 870 | nC | ||
| Rgint | Integrated gate resistor | f = 1M; | TJ = 25°C | 1.9 | Ω | ||
| Vpp = 1V | |||||||
| Cies | Input Capacitance | TJ = 25°C | 8 | ||||
| VCE = 25V | |||||||
| Coes | Output Capacitance | VGE = 0V | TJ = 25°C | 1.35 | nF | ||
| Cres | Reverse Transfer | f = 1MHz | TJ = 25°C | 0.81 | |||
| Capacitance | |||||||
| RθJC | Thermal Resistance, Junction-to-Case (IGBT) | 0.29 | °C/W | ||||
Package Dimension
Product Categories : Semiconductor Module Devices > IGBT Module
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