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Home > Products > Semiconductor Module Devices > IGBT Module > Higher energy 1200V 100A IGBT Module
Higher energy 1200V 100A IGBT Module
Higher energy 1200V 100A IGBT Module
Higher energy 1200V 100A IGBT Module
Higher energy 1200V 100A IGBT Module
  • Higher energy 1200V 100A IGBT Module
  • Higher energy 1200V 100A IGBT Module
  • Higher energy 1200V 100A IGBT Module
  • Higher energy 1200V 100A IGBT Module

Higher energy 1200V 100A IGBT Module

    Unit Price: USD 19.5 - 29 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-G100HF120D1

Place Of OriginChina

VCES1200V

VGES±30V

IC TC = 25°C200A

IC TC = 100°C100A

ICM200A

PD430W

Tsc> 10us

TJ150°C

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

TransportationOcean,Land

Supply Ability100000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

1200V 100A IGBT Module P/N:YZPST-G100HF120D1
Features:
1200V100A,VCE(sat)(typ.)=3.0V Low inductive design                             
Lower losses and higher energy
Ultrafast switching speed
Excellent  short circuit ruggedness
General Applications:
 Auxiliary lnverter
 Inductive Heating and Welding

 UPS Systems

Equivalent Circuit Schematic

Absolute Maximum Ratings of IGBT

VCES Collector to Emitter Voltage 1200 V
VGES Continuous Gate to Emitter Voltage ±30 V
TC = 25°C 200
IC Continuous Collector Current TC = 100°C 100 A
ICM Pulse Collector Current TJ = 150°C 200 A
PD Maximum Power Dissipation (IGBT) TC = 25°C, 430 W
tsc > 10 µs
Short Circuit Withstand Time
Maximum IGBT Junction Temperature 150 °C
TJ
TJOP
Maximum Operating Junction Temperature Range -40 to +150 °C
Tstg Storage Temperature Range -40 to +125 °C
VRRM Repetitive Peak Reverse Voltage Preliminary Data 1200 V
TC = 25°C 200
IF Diode Continuous Forward Current TC = 100°C 100 A
IFM Diode Maximum Forward Current 200 A


Absolute Maximum Ratings of Freewheeling Diode

VRRM Repetitive Peak Reverse Voltage Preliminary Data 1200 V
TC = 25°C 200
IF Diode Continuous Forward Current TC = 100°C 100 A
IFM Diode Maximum Forward Current 200 A

Switching Characteristics of IGBT

td(on) TJ = 25°C 30
Turn-on Delay Time ns
TJ = 125°C 35
TJ = 25°C 50
tr Turn-on Rise Time TJ = 125°C 55 ns
TJ = 25°C 380
td(off) Turn-off Delay Time TJ = 125°C 390 ns
TJ = 25°C 110
tf Turn-off  Fall Time TJ = 125°C 160 ns
VCC = 600V TJ = 25°C 4.6
Eon Turn-on Switching Loss IC = 100A TJ = 125°C 5.7 mJ
RG  = 5.6Ω TJ = 25°C 3.1
Eoff Turn-off Switching Loss VGE = ±15V TJ = 125°C 5.1 mJ
Qg Total Gate Charge Inductive Load TJ = 25°C 870 nC
Rgint Integrated gate resistor f  = 1M; TJ = 25°C 1.9 Ω
Vpp = 1V
Cies Input Capacitance TJ = 25°C 8
VCE = 25V
Coes Output Capacitance VGE = 0V TJ = 25°C 1.35 nF
Cres Reverse Transfer f = 1MHz TJ = 25°C 0.81
Capacitance
RθJC Thermal Resistance, Junction-to-Case (IGBT) 0.29 °C/W

Package Dimension

Package Dimension


Product Categories : Semiconductor Module Devices > IGBT Module

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