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Basic Info
Model No.: YZPST-R1275NS21L
Brand: YZPST
Additional Info
Productivity: 100
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 1000
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
High Power Thyristor Inverter
YZPST-R1275NS21L
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Average value of on-state current | IT(AV) |
| 1275 | | A | Tc=55oC |
| RMS value of on-state current | ITRMS |
| 1870 | | A | Nominal value |
| Peak one cPSTCle surge (non repetitive) current |
ITSM |
| 21400 18900 |
| A A | 8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
| I square t | I2t |
| 2.66x106 |
| A2s | 8.3 msec and 10.0 msec |
| Latching current | IL |
| 1000 |
| mA | VD = 24 V; RL= 12 ohms |
| Holding current | IH |
| 500 |
| mA | VD = 24 V; I = 2.5 A |
| Peak on-state voltage | VTM | | 1.90 | | V | ITM = 2000 A; Duty cPSTCle £ 0.01% |
| Critical rate of rise of on-state current (5, 6) | di/dt | | 1000 | | A/ms | Switching from VDRM£ 1000 V, non-repetitive |
Gating
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Peak gate power dissipation | PGM |
| 200 | | W | tp = 40 us |
| Average gate power dissipation | PG(AV) |
| 5 |
| W | |
| Peak gate current | IGM |
| 10 |
| A | |
| Gate current required to trigger all units | IGT |
| 300 150 125 |
| mA mA mA | VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
| Gate voltage required to trigger all units | VGT |
0.30 | 5 3 |
| V V V | VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
| Peak negative voltage | VGRM | | 5 | | V | |
Dynamic
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Delay time | td |
| 1.5 | 0.7 | ms | ITM = 500 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms |
| Turn-off time (with VR = -50 V) | tq |
| 40 |
| ms | ITM = 1000 A; di/dt = 25 A/ms;VR³ -50 V; Re-applied dV/dt = 200 V/ms linear to 80% VDRM; VG = 0; Tj = 125 oC; Duty cPSTCle ³ 0.01% |
| Reverse recovery charge | Qrr |
| * | 2000 | mC | ITM = 1000 A; di/dt = 25 A/ms;VR³ -50 V |
* For guaranteed max. value, contact factory.
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Operating temperature | Tj | -40 | +125 | | oC | |
| Storage temperature | Tstg | -40 | +150 |
| oC | |
| Thermal resistance - junction to case | RQ (j-c) | | 0.023 0.046 |
| oC/W | Double sided cooled Single sided cooled |
| Thermal resistamce - case to sink | RQ (j-c) | | 0.010 0.020 |
| oC/W | Double sided cooled * Single sided cooled * |
| Mounting force | P | 19.5 | 21 |
| kN | |
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data
Outline Drawing
Product Categories : Semiconductor Disc Devices(Capsule Type) > Inverter Thyristor
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