| Unit Price: | USD 25 - 33 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,Paypal |
| Incoterm: | FOB,CFR,CIF |
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Basic Info
Model No.: YZPST-SKM195GB066D
Brand: YZPST
Place Of Origin: China
VCES: 650V
IC: 200A
ICRM: 400A
VGES: ±20V
Ptot: 695W
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 10000
Transportation: Ocean,Land
Supply Ability: 10000
Port: SHANGHAI
Payment Type: L/C,Paypal
Incoterm: FOB,CFR,CIF
Product Description
IGBT Power Module Type:YZPST-SKM195GB066D
Applications
Inverter for motor drive
AC and DC servo drive amplifier
UPS (Uninterruptible Power Supplies)
Soft switching welding machine
Features
Low Vce(sat) with Trench Field-stop technology
Vce(sat) with positive temperature coefficient
Including fast & soft recovery anti-parallel FWD
High short circuit capability(10us)
Low inductance module structure
Maximum junction temperature 175℃
Absolute Maximum Ratings
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25℃ | 650 | V |
| Continuous Collector Current | IC | Tc=100℃ | 200 | A |
| Peak Collector Current | ICRM | tp=1ms | 400 | A |
| Gate-Emitter Voltage | VGES | Tvj=25℃ | ±20 | V |
| Total Power Dissipation (IGBT-inverter) | Ptot | Tc=25℃ Tvjmax=175℃ | 695 | W |
IGBT Characteristics
| Parameter | Value | Unit | ||||
| Symbol | Conditions | Min. | Typ. | Max. | ||
| Gate-Emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =3.2mA,Tvj=25℃ | 5.1 | 5.8 | 6.3 | V |
| VCE=650V,VGE=0V, Tvj=25℃ | 1 | mA | ||||
| Collector-Emitter Cut-off Current | ICES | VCE=650V,VGE=0V, Tvj=125℃ | 5 | mA | ||
| Collector-Emitter | Ic=200A,VGE=15V, Tvj=25℃ | 1.45 | 1.95 | V | ||
| Saturation Voltage | VCE(sat) | Ic=200A,VGE=15V, Tvj=125℃ | 1.65 | V | ||
| Input Capacitance | Cies | VCE=25V,VGE =0V, | 12.3 | nF | ||
| Reverse Transfer Capacitance | Cres | f=1MHz, Tvj=25℃ | 0.37 | nF | ||
| Internal Gate Resistance | Rgint | 1 | Ω | |||
| Turn-on Delay Time | td(on) | 48 | Ns | |||
| Rise Time | tr | IC =200 A | 48 | Ns | ||
| Turn-off Delay Ttime | td(off) | VCE =300 V | 348 | Ns | ||
| Fall Time | tf | VGE = ±15V | 58 | Ns | ||
| Energy Dissipation During Turn-on Time | Eon | RG = 3.6Ω | 2.32 | mJ | ||
| Energy Dissipation During Turn-off Time | Eoff | Tvj=25℃ | 5.85 | mJ | ||
| Turn-on Delay Time | td(on) | 48 | Ns | |||
| Rise Time | tr | IC =200 A | 48 | Ns | ||
| Turn-off Delay Time | td(off) | VCE = 300V | 364 | Ns | ||
| Fall Time | tf | VGE = ±15V | 102 | Ns | ||
| Energy Dissipation During Turn-on Time | Eon | RG =3.6Ω | 3.08 | mJ | ||
| Energy Dissipation During Turn-off Time | Eoff | Tvj=125℃ | 7.92 | mJ | ||
| SC Data | Isc | Tp≤10us,VGE=15V,Tvj=150℃ , Vcc=300V,VCEM≤650V | 1000 | A | ||
Diode Characteristics
| Parameter | Value | Unit | ||||
| Symbol | Conditions | Min. | Typ. | Max. | ||
| Diode DC Forward Current | IF | Tc=100℃ | 200 | A | ||
| Diode Peak Forward Current | IFRM | 400 | A | |||
| IF=200A,Tvj=25℃ | 1.55 | 1.95 | V | |||
| Forward Voltage | VF | IF=200A,Tvj=125℃ | 1.5 | V | ||
| Parameter | Value | Unit | ||||
| Symbol | Conditions | Min. | Typ. | Max. | ||
| Recovered Charge | Qrr | 8.05 | uC | |||
| IF =200 A | ||||||
| VR=300V | ||||||
| Peak Reverse Recovery Current | Irr | -diF/dt =4200A/us | 148 | A | ||
| Reverse Recovery Energy | Erec | Tvj=25℃ | 1.94 | mJ | ||
| Recovered Charge | Qrr | 16.9 | uC | |||
| IF =200 A | ||||||
| VR=300V | ||||||
| Peak Reverse Recovery Current | Irr | -diF/dt =4200A/us | 186 | A | ||
| Reverse Recovery Energy | Erec | Tvj=125℃ | 3.75 | mJ | ||
Module CharacteristicsTC=25°C unless otherwise specified
| Parameter | Symbol | Conditions | Value | Unit | ||
| Min. | Typ. | Max. | ||||
| Isolation voltage | Visol | t=1min,f=50Hz | 2500 | V | ||
| Maximum Junction Temperature | Tjmax | 150 | ℃ | |||
| Operating Junction Temperature | Tvj op | -40 | 125 | ℃ | ||
| Storage Temperature | Tstg | -40 | 125 | ℃ | ||
| per IGBT-inverter | 0.19 | K/W | ||||
| Junction-to Case | R θjc | per Diode-inverter | 0.31 | K/W | ||
| Case to Sink | R θcs | Conductive grease applied | 0.085 | K/W | ||
| Module ElectrodesTorque | Mt | Recommended(M5) | 2.5 | 5 | N · m | |
| Module-to-SinkTorque | Ms | Recommended(M6) | 3 | 5 | N · m | |
| Weight of Module | G | 150 | g | |||
Package Dimensions
Product Categories : Semiconductor Module Devices > IGBT Module
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