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Home > Products > Semiconductor Module Devices > IGBT Module > Low VCE sat Trench IGBT technology 450A IGBT Module 1700V
Low VCE sat Trench IGBT technology 450A IGBT Module 1700V
Low VCE sat Trench IGBT technology 450A IGBT Module 1700V
Low VCE sat Trench IGBT technology 450A IGBT Module 1700V
Low VCE sat Trench IGBT technology 450A IGBT Module 1700V
Low VCE sat Trench IGBT technology 450A IGBT Module 1700V
  • Low VCE sat Trench IGBT technology 450A IGBT Module 1700V
  • Low VCE sat Trench IGBT technology 450A IGBT Module 1700V
  • Low VCE sat Trench IGBT technology 450A IGBT Module 1700V
  • Low VCE sat Trench IGBT technology 450A IGBT Module 1700V
  • Low VCE sat Trench IGBT technology 450A IGBT Module 1700V

Low VCE sat Trench IGBT technology 450A IGBT Module 1700V

    Unit Price: USD 120 - 160 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-GD450HFX170C6S

BrandYZPST

Place Of OriginChina

VCES1700V

VGES±20V

ICM900A

PD2542W

VRRM1700V

IF450A

IFM900A

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000

TransportationOcean,Land,Express,Others

Place of OriginCHINA

Supply Ability1000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

IGBT Module 


YZPST-450HFX170C6S
1700V/450A 2 in one-package
General Description


IGBT Power Module provides ultra

low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as

general inverters and UPS.

Features
 Low VCE(sat) Trench IGBT technology
 10μs short circuit capability
 VCE(sat) with positive temperature coefficient
 Maximum junction temperature 175oC
 Low inductance case
 Fast & soft reverse recovery anti-parallel FWD
 Isolated copper baseplate using DBC technology
Typical Applications

 Inverter for motor drive

 AC and DC servo drive amplifier

 Uninterruptible power supply


IGBT

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1700

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current  @ TC=25oC

@ TC= 100oC

706

450

A

ICM

Pulsed Collector Current  tp=1ms

900

A

PD

Maximum Power Dissipation  @ T =175oC

2542

W

Diode


Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1700

V

IF

Diode Continuous Forward Current

450

A

IFM

Diode Maximum Forward Current  tp=1ms

900

A

Module

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage  RMS,f=50Hz,t=1min

4000

V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IC=450A,VGE=15V, Tj=25oC 1.85 2.2
VCE(sat) Collector to Emitter IC=450A,VGE=15V, Tj=125oC 2.25 V
Saturation Voltage IC=450A,VGE=15V, Tj=150oC 2.35
VGE(th) Gate-Emitter Threshold Voltage IC= 18.0mA,VCE=VGE, Tj=25oC 5.6 6.2 6.8 V
ICES Collector Cut-Off VCE=VCES,VGE=0V, 5 mA
Current Tj=25oC
IGES Gate-Emitter Leakage Current VGE=VGES,VCE=0V, Tj=25oC 400 nA
RGint Internal Gate Resistance 1.67 Ω
Cies Input Capacitance VCE=25V,f=1MHz, 54.2 nF
Cres Reverse Transfer VGE=0V 1.32 nF
Capacitance
QG Gate Charge VGE=- 15…+15V 4.24 μC
td(on) Turn-On Delay Time 179 ns
tr Rise Time 105 ns
td(off) Turn-Off Delay Time VCC=900V,IC=450A,  RG=3.3Ω,VGE=±15V, Tj=25oC 680 ns
tf Fall Time 375 ns
Eon Turn-On Switching 116 mJ
Loss
Eoff Turn-Off Switching 113 mJ
Loss
td(on) Turn-On Delay Time 208 ns
tr Rise Time 120 ns
td(off) Turn-Off Delay Time VCC=900V,IC=450A,  RG=3.3Ω,VGE=±15V, Tj= 125oC 784 ns
tf Fall Time 613 ns
Eon Turn-On Switching 152 mJ
Loss
Eoff Turn-Off Switching 171 mJ
Loss
td(on) Turn-On Delay Time 208 ns
tr Rise Time 120 ns
td(off) Turn-Off Delay Time VCC=900V,IC=450A,  RG=3.3Ω,VGE=±15V, Tj= 150oC 800 ns
tf Fall Time 720 ns
Eon Turn-On Switching 167 mJ
Loss
Eoff Turn-Off Switching 179 mJ
Loss
tP≤10μs,VGE=15V,
ISC SC Data Tj=150oC,VCC= 1000V, VCEM≤1700V 1800 A
Diode Characteristics TC=25oC unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Diode Forward IF=450A,VGE=0V,Tj=25oC 1.8 2.25
VF Voltage IF=450A,VGE=0V,Tj= 125oC 1.95 V
IF=450A,VGE=0V,Tj= 150oC 1.9
Qr Recovered Charge VR=900V,IF=450A, 105 μC
IRM Peak Reverse -di/dt=4580A/μs,VGE=- 15V Tj=25oC 198 A
Recovery Current
Erec Reverse Recovery Energy 69 mJ
Qr Recovered Charge VR=900V,IF=450A, 187 μC
IRM Peak Reverse -di/dt=4580A/μs,VGE=- 15V Tj= 125oC 578 A
Recovery Current
Erec Reverse Recovery Energy 129 mJ
Qr Recovered Charge VR=900V,IF=450A, 209 μC
IRM Peak Reverse -di/dt=4580A/μs,VGE=- 15V Tj= 150oC 585 A
Recovery Current
Erec Reverse Recovery Energy 150 mJ
Package Dimensions

Package Dimensions

Product Categories : Semiconductor Module Devices > IGBT Module

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