| Unit Price: | USD 120 - 160 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
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Basic Info
Model No.: YZPST-GD450HFX170C6S
Brand: YZPST
Place Of Origin: China
VCES: 1700V
VGES: ±20V
ICM: 900A
PD: 2542W
VRRM: 1700V
IF: 450A
IFM: 900A
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 1000000
Transportation: Ocean,Land,Express,Others
Place of Origin: CHINA
Supply Ability: 1000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
IGBT Power Module provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
general inverters and UPS.
Features
Low VCE(sat) Trench IGBT technology
10μs short circuit capability
VCE(sat) with positive temperature coefficient
Maximum junction temperature 175oC
Low inductance case
Fast & soft reverse recovery anti-parallel FWD
Isolated copper baseplate using DBC technology
Typical Applications
Inverter for motor drive
AC and DC servo drive amplifier
Uninterruptible power supply
IGBT
| Symbol | Description | Value | Unit |
| VCES | Collector-Emitter Voltage | 1700 | V |
| VGES | Gate-Emitter Voltage | ±20 | V |
| IC | Collector Current @ TC=25oC @ TC= 100oC | 706 450 | A |
| ICM | Pulsed Collector Current tp=1ms | 900 | A |
| PD | | 2542 | W |
| Symbol | Description | Value | Unit |
| VRRM | Repetitive Peak Reverse Voltage | 1700 | V |
| IF | Diode Continuous Forward Current | 450 | A |
| IFM | Diode Maximum Forward Current tp=1ms | 900 | A |
| Symbol | Description | Value | Unit |
| Tjmax | Maximum Junction Temperature | 175 | oC |
| Tjop | Operating Junction Temperature | -40 to +150 | oC |
| TSTG | Storage Temperature Range | -40 to +125 | oC |
| VISO | Isolation Voltage RMS,f=50Hz,t=1min | 4000 | V |
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| IC=450A,VGE=15V, Tj=25oC | 1.85 | 2.2 | ||||
| VCE(sat) | Collector to Emitter | IC=450A,VGE=15V, Tj=125oC | 2.25 | V | ||
| Saturation Voltage | IC=450A,VGE=15V, Tj=150oC | 2.35 | ||||
| VGE(th) | Gate-Emitter Threshold Voltage | IC= 18.0mA,VCE=VGE, Tj=25oC | 5.6 | 6.2 | 6.8 | V |
| ICES | Collector Cut-Off | VCE=VCES,VGE=0V, | 5 | mA | ||
| Current | Tj=25oC | |||||
| IGES | Gate-Emitter Leakage Current | VGE=VGES,VCE=0V, Tj=25oC | 400 | nA | ||
| RGint | Internal Gate Resistance | 1.67 | Ω | |||
| Cies | Input Capacitance | VCE=25V,f=1MHz, | 54.2 | nF | ||
| Cres | Reverse Transfer | VGE=0V | 1.32 | nF | ||
| Capacitance | ||||||
| QG | Gate Charge | VGE=- 15…+15V | 4.24 | μC | ||
| td(on) | Turn-On Delay Time | 179 | ns | |||
| tr | Rise Time | 105 | ns | |||
| td(off) | Turn-Off Delay Time | VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj=25oC | 680 | ns | ||
| tf | Fall Time | 375 | ns | |||
| Eon | Turn-On Switching | 116 | mJ | |||
| Loss | ||||||
| Eoff | Turn-Off Switching | 113 | mJ | |||
| Loss | ||||||
| td(on) | Turn-On Delay Time | 208 | ns | |||
| tr | Rise Time | 120 | ns | |||
| td(off) | Turn-Off Delay Time | VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj= 125oC | 784 | ns | ||
| tf | Fall Time | 613 | ns | |||
| Eon | Turn-On Switching | 152 | mJ | |||
| Loss | ||||||
| Eoff | Turn-Off Switching | 171 | mJ | |||
| Loss | ||||||
| td(on) | Turn-On Delay Time | 208 | ns | |||
| tr | Rise Time | 120 | ns | |||
| td(off) | Turn-Off Delay Time | VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj= 150oC | 800 | ns | ||
| tf | Fall Time | 720 | ns | |||
| Eon | Turn-On Switching | 167 | mJ | |||
| Loss | ||||||
| Eoff | Turn-Off Switching | 179 | mJ | |||
| Loss | ||||||
| tP≤10μs,VGE=15V, | ||||||
| ISC | SC Data | Tj=150oC,VCC= 1000V, VCEM≤1700V | 1800 | A |
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| Diode Forward | IF=450A,VGE=0V,Tj=25oC | 1.8 | 2.25 | |||
| VF | Voltage | IF=450A,VGE=0V,Tj= 125oC | 1.95 | V | ||
| IF=450A,VGE=0V,Tj= 150oC | 1.9 | |||||
| Qr | Recovered Charge | VR=900V,IF=450A, | 105 | μC | ||
| IRM | Peak Reverse | -di/dt=4580A/μs,VGE=- 15V Tj=25oC | 198 | A | ||
| Recovery Current | ||||||
| Erec | Reverse Recovery Energy | 69 | mJ | |||
| Qr | Recovered Charge | VR=900V,IF=450A, | 187 | μC | ||
| IRM | Peak Reverse | -di/dt=4580A/μs,VGE=- 15V Tj= 125oC | 578 | A | ||
| Recovery Current | ||||||
| Erec | Reverse Recovery Energy | 129 | mJ | |||
| Qr | Recovered Charge | VR=900V,IF=450A, | 209 | μC | ||
| IRM | Peak Reverse | -di/dt=4580A/μs,VGE=- 15V Tj= 150oC | 585 | A | ||
| Recovery Current | ||||||
| Erec | Reverse Recovery Energy | 150 | mJ |
Product Categories : Semiconductor Module Devices > IGBT Module
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