| Unit Price: | USD 135 - 165 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
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Basic Info
Model No.: YZPST-G900WB120B6TC
Brand: YZPST
Place Of Origin: China
VCES: 1200V
VGES: ±20V
IC TC=25℃: 880A
IC TC=95℃: 900A
ICM: 1200A
Ptot: 3125W
IF(AV): 900A
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 10000
Transportation: Ocean,Land
Supply Ability: 10000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
1200V 900A IGBT Module
P/N: YZPST-G900WB120B6TC
PRODUCT FEATURES
IGBT CHIP(Trench+FS)
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Temperature sense included
APPLICATIONSAC motor control
Motion/servo control
Inverter and power supplies
Photovoltaic/Fuel cell
IGBT-ABSOLUTE MAXIMUM RATINGS(TC =25°C unless otherwise specified)
| Symbol | Parameter/Test Conditions | Values | Unit | |
| VCES | Collector Emitter Voltage | TJ=25℃ | 1200 | V |
| VGES | Gate Emitter Voltage | ±20 | ||
| IC | DC Collector Current | TC=25℃, TJmax =175℃ | 880 | |
| TC=95℃, TJmax =175℃ | 900 | A | ||
| ICM | Repetitive Peak Collector Current | tp=1ms | 1200 | |
| Ptot | Power Dissipation Per IGBT | TC=25℃, TJmax =175℃ | 3125 | W |
Diode-ABSOLUTE MAXIMUM RATINGS ( TC =25°C unless otherwise specified)
| Symbol | Parameter/Test Conditions | Values | Unit | |
| VRRM | Repetitive Reverse Voltage | TJ=25℃ | 1200 | V |
| IF(AV) | Average Forward Current | 900 | A | |
| IFRM | Repetitive Peak Forward Current | tp=1ms | 1200 | |
| I2t | TJ =150℃, t=10ms, VR=0V | 45 | kA2s | |
IGBT-inverter
ELECTRICAL CHARACTERISTICS (TC =25°C unless otherwise specified)
Symbol Parameter/Test Conditions Min. Typ. Max. Unit VGE(th) Gate Emitter Threshold Voltage VCE=VGE , IC=24mA 5 5.8 6.5 Collector Emitter IC=900A, VGE=15V, TJ=25℃ 1.9 2.3 VCE(sat) Saturation Voltage IC=900A, VGE=15V, TJ=125℃ 2.2 V IC=900A, VGE=15V, TJ=150℃ 2.25 ICES Collector Leakage Current VCE=1200V, VGE=0V, TJ=25℃ 1 mA VCE=1200V, VGE=0V, TJ=150℃ 10 IGES Gate Leakage Current VCE=0V,VGE=±20V, TJ=25℃ -400 400 nA RGint Integrated Gate Resistor 0.7 Ω Qg Gate Charge VCE=900V, IC=900A , VGE=15V 3.1 µC Cies Input Capacitance VCE=25V, VGE=0V, f =1MHz 43.2 nF Cres Reverse Transfer Capacitance 2.07 nF td(on) Turn on Delay Time VCC=600V,IC=900A RG =1.5Ω , TJ=25℃ 100 ns VGE=±15V, TJ=150℃ 110 ns tr Rise Time Inductive Load TJ=25℃ 85 ns TJ=150℃ 95 ns td(off) Turn off Delay Time VCC=600V,IC=900A RG =1.5Ω , TJ=25℃ 530 ns VGE=±15V, TJ=150℃ 580 ns tf Fall Time Inductive Load TJ=25℃ 65 ns TJ=150℃ 215 ns TJ=25℃ 55 mJ Eon Turn on Energy TJ=125℃ 85 mJ VCC=600V,IC=900A RG =1.5Ω , TJ=150℃ 95 mJ VGE=±15V, TJ=25℃ 45 mJ Eoff Turn off Energy Inductive Load TJ=125℃ 58 mJ TJ=150℃ 63 mJ ISC Short Circuit Current tpsc≤10µs , VGE=15V 2200 A TJ=150℃,VCC=800V RthJC Junction to Case Thermal Resistance （Per IGBT） 0.048 K /W
Package Outline
Product Categories : Semiconductor Module Devices > IGBT Module
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