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Home > Products > Semiconductor Module Devices > IGBT Module > Fast switching and short tail current 1200V 900A IGBT Module
Fast switching and short tail current 1200V 900A IGBT Module
Fast switching and short tail current 1200V 900A IGBT Module
Fast switching and short tail current 1200V 900A IGBT Module
Fast switching and short tail current 1200V 900A IGBT Module
Fast switching and short tail current 1200V 900A IGBT Module
  • Fast switching and short tail current 1200V 900A IGBT Module
  • Fast switching and short tail current 1200V 900A IGBT Module
  • Fast switching and short tail current 1200V 900A IGBT Module
  • Fast switching and short tail current 1200V 900A IGBT Module
  • Fast switching and short tail current 1200V 900A IGBT Module

Fast switching and short tail current 1200V 900A IGBT Module

    Unit Price: USD 135 - 165 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-G900WB120B6TC

BrandYZPST

Place Of OriginChina

VCES1200V

VGES±20V

IC TC=25℃880A

IC TC=95℃900A

ICM1200A

Ptot3125W

IF(AV)900A

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity10000

TransportationOcean,Land

Supply Ability10000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

1200V 900A  IGBT  Module

P/N: YZPST-G900WB120B6TC

PRODUCT FEATURES

IGBT  CHIP(Trench+FS)

Low saturation voltage and positive temperature coefficient

Fast switching and short tail current

Free wheeling diodes with fast and soft reverse recovery

Temperature sense included

APPLICATIONS

 AC motor control

 Motion/servo control

 Inverter and power supplies

 Photovoltaic/Fuel cell

YZPST-G900WB120B6TC IGBT Module


IGBT-ABSOLUTE MAXIMUM RATINGS(TC =25°C unless otherwise specified)

Symbol Parameter/Test Conditions Values Unit
VCES Collector Emitter Voltage TJ=25 1200 V
VGES Gate Emitter Voltage ±20
IC DC Collector Current TC=25, TJmax =175 880
TC=95, TJmax =175 900 A
ICM Repetitive Peak Collector Current tp=1ms 1200
Ptot Power Dissipation Per IGBT TC=25, TJmax =175 3125 W


Diode-ABSOLUTE MAXIMUM RATINGS ( TC =25°C unless otherwise specified)

Symbol Parameter/Test Conditions Values Unit
VRRM Repetitive Reverse Voltage TJ=25 1200 V
IF(AV) Average Forward Current 900 A
IFRM Repetitive Peak Forward Current tp=1ms 1200
I2t TJ =150, t=10ms, VR=0V 45 kA2s

IGBT-inverter

ELECTRICAL CHARACTERISTICS (TC =25°C unless otherwise specified)

Symbol Parameter/Test Conditions Min. Typ. Max. Unit
VGE(th) Gate Emitter Threshold Voltage VCE=VGE , IC=24mA 5 5.8 6.5
Collector Emitter IC=900A, VGE=15V, TJ=25 1.9 2.3
VCE(sat) Saturation Voltage IC=900A, VGE=15V, TJ=125 2.2 V
IC=900A, VGE=15V, TJ=150 2.25
ICES Collector Leakage Current VCE=1200V, VGE=0V, TJ=25 1 mA
VCE=1200V, VGE=0V, TJ=150 10
IGES Gate Leakage Current VCE=0V,VGE=±20V, TJ=25 -400 400 nA
RGint Integrated Gate Resistor 0.7
Qg Gate Charge VCE=900V, IC=900A , VGE=15V 3.1 µC
Cies Input Capacitance VCE=25V, VGE=0V, f =1MHz 43.2 nF
Cres Reverse Transfer Capacitance 2.07 nF
td(on) Turn on Delay Time VCC=600V,IC=900A RG =1.5Ω , TJ=25 100 ns
VGE=±15V, TJ=150 110 ns
tr Rise Time Inductive Load TJ=25 85 ns
TJ=150 95 ns
td(off) Turn off Delay Time VCC=600V,IC=900A RG =1.5Ω , TJ=25 530 ns
VGE=±15V, TJ=150 580 ns
tf Fall Time Inductive Load TJ=25 65 ns
TJ=150 215 ns
TJ=25 55 mJ
Eon Turn on Energy TJ=125 85 mJ
VCC=600V,IC=900A RG =1.5Ω , TJ=150 95 mJ
VGE=±15V, TJ=25 45 mJ
Eoff Turn off Energy Inductive Load TJ=125 58 mJ
TJ=150 63 mJ
ISC Short Circuit Current tpsc10µs , VGE=15V 2200 A
TJ=150,VCC=800V
RthJC Junction to Case Thermal Resistance  Per IGBT 0.048 K /W

Package Outline

Package Outline Jpg



Product Categories : Semiconductor Module Devices > IGBT Module

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