| Unit Price: | USD 23.5 - 31.5 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
Download:
Basic Info
Model No.: YZPST-150B120F23
Brand: YZPST
Place Of Origin: China
VCES: 1200V
IC: 150A
ICRM: 300A
VGES: ±20V
Ptot: 968W
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 100000
Transportation: Ocean,Land
Supply Ability: 10000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
Maximum junction temperature 175℃
Absolute Maximum Ratings
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25℃ | 1200 | V |
| Continuous Collector Current | IC | Tc=100℃ | 150 | A |
| Peak Collector Current | ICRM | tp=1ms | 300 | A |
| Gate-Emitter Voltage | VGES | Tvj=25℃ | ±20 | V |
| Total Power Dissipation (IGBT-inverter) | Ptot | Tc=25℃ Tvjmax=175℃ | 968 | W |
IGBT Characteristics
| Parameter | Value | Unit | ||||
| Symbol | Conditions | Min. | Typ. | Max. | ||
| Gate-Emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =4mA,Tvj=25℃ | 5.2 | 6 | 6.8 | V |
| VCE=1200V,VGE=0V, Tvj=25℃ | 1 | mA | ||||
| Collector-Emitter Cut-off Current | ICES | VCE=1200V,VGE=0V, Tvj=125℃ | 5 | mA | ||
| Collector-Emitter | Ic=150A,VGE=15V, Tvj=25℃ | 1.8 | 2.1 | V | ||
| Saturation Voltage | VCE(sat) | Ic=150A,VGE=15V, Tvj=125℃ | 2 | V | ||
| Input Capacitance | Cies | 9.8 | nF | |||
| Output Capacitance | Coes | VCE=25V,VGE =0V, | 0.82 | nF | ||
| Reverse Transfer Capacitance | Cres | f=1MHz, Tvj=25℃ | 0.48 | nF | ||
| Internal Gate Resistance | Rgint | 2.5 | Ω | |||
| Turn-on Delay Time | td(on) | 185 | Ns | |||
| Rise Time | tr | IC =150 A | 55 | Ns | ||
| Turn-off Delay Ttime | td(off) | VCE = 600 V | 360 | Ns | ||
| Fall Time | tf | VGE = ±15V | 115 | Ns | ||
| Energy Dissipation During Turn-on Time | Eon | RG = 5.1Ω | 15.4 | mJ | ||
| Energy Dissipation During Turn-off Time | Eoff | Tvj=25℃ | 11.6 | mJ | ||
| Turn-on Delay Time | td(on) | 200 | Ns | |||
| Rise Time | tr | IC =150 A | 60 | Ns | ||
| Turn-off Delay Time | td(off) | VCE = 600 V | 420 | Ns | ||
| Fall Time | tf | VGE = ±15V | 120 | Ns | ||
| Energy Dissipation During Turn-on Time | Eon | RG =5.1Ω | 23.2 | mJ | ||
| Energy Dissipation During Turn-off Time | Eoff | Tvj=125℃ | 17 | mJ | ||
| Tp≤10us,VGE=15V, | ||||||
| SC Data | Isc | Tvj=150℃,Vcc=600V, | 500 | A | ||
| VCEM≤1200V | ||||||
Diode Characteristics
| Parameter | Value | Unit | ||||
| Symbol | Conditions | Min. | Typ. | Max. | ||
| Diode DC Forward Current | IF | Tc=100℃ | 150 | A | ||
| Diode Peak Forward Current | IFRM | 300 | A | |||
| IF=150A,Tvj=25℃ | 1.8 | 2.3 | V | |||
| Forward Voltage | VF | IF=150A,Tvj=125℃ | 1.85 | V | ||
| Parameter | Value | Unit | ||||
| Symbol | Conditions | Min. | Typ. | Max. | ||
| Recovered Charge | Qrr | 13.4 | uC | |||
| IF =150 A | ||||||
| Peak Reverse Recovery Current | Irr | VR=600V | 143 | A | ||
| Reverse Recovery Time | trr | -diF/dt =2200A/us | 160 | ns | ||
| Reverse Recovery Energy | Erec | Tvj=25℃ | 9.1 | mJ | ||
| Recovered Charge | Qrr | 26.1 | uC | |||
| IF =150 A | ||||||
| Peak Reverse Recovery Current | Irr | VR=600V | 178 | A | ||
| Reverse Recovery Time | trr | -diF/dt =2200A/us | 440 | ns | ||
| Reverse Recovery Energy | Erec | Tvj=125℃ | 15.4 | mJ | ||
Module CharacteristicsTC=25°C unless otherwise specified
| Parameter | Symbol | Conditions | Value | Unit | ||
| Min. | Typ. | Max. | ||||
| Isolation voltage | Visol | t=1min,f=50Hz | 2500 | V | ||
| Maximum Junction Temperature | Tjmax | 150 | ℃ | |||
| Operating Junction Temperature | Tvjop | -40 | 125 | ℃ | ||
| Storage Temperature | Tstg | -40 | 125 | ℃ | ||
| per IGBT-inverter | 0.155 | K/W | ||||
| Junction-to Case | R θjc | per Diode-inverter | 0.292 | K/W | ||
| Case to Sink | R θcs | Conductive grease applied | 0.05 | K/W | ||
| Module ElectrodesTorque | Mt | Recommended(M5) | 2.5 | 5 | N·m | |
| Module-to-SinkTorque | Ms | Recommended(M6) | 3 | 5 | N·m | |
| Weight of Module | G | 150 | g | |||
Package Dimensions
Product Categories : Semiconductor Module Devices > IGBT Module
Hot Products
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Contact Now
