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Home > Products > Semiconductor Module Devices > IGBT Module > Field Stop IGBT Technology 650V 100A IGBT Module
Field Stop IGBT Technology 650V 100A IGBT Module
Field Stop IGBT Technology 650V 100A IGBT Module
Field Stop IGBT Technology 650V 100A IGBT Module
Field Stop IGBT Technology 650V 100A IGBT Module
  • Field Stop IGBT Technology 650V 100A IGBT Module
  • Field Stop IGBT Technology 650V 100A IGBT Module
  • Field Stop IGBT Technology 650V 100A IGBT Module
  • Field Stop IGBT Technology 650V 100A IGBT Module

Field Stop IGBT Technology 650V 100A IGBT Module

    Unit Price: USD 21 - 28 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-G100HF65D1

BrandYZPST

Place Of OriginChina

VCES650V

VGES±30V

IC TC = 25°C200A

IC TC = 100°C100A

ICM200A

PD390W

Tsc>10µs

Additional Info

Productivity100000

TransportationOcean,Land

Supply Ability100000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description


650V 100A IGBT Module  YZPST-G100HF65D1
Features:
 650V100A,VCE(sat)(typ.)=1.80V
 Low inductive design
 Lower losses and higher energy
 Field Stop IGBT Technology
 Excellent  short circuit ruggedness

General Applications:
 Auxiliary lnverter
 Inductive Heating and Welding
 Solar Applications
 UPS Systems


YZPST-G100HF65D1 IGBT


Absolute Maximum Ratings of IGBT

VCES Collector to Emitter Voltage 650 V
VGES Continuous Gate to Emitter Voltage ±30 V
TC  = 25°C 200
IC Continuous Collector Current TC  = 100°C 100 A
ICM Pulse Collector Current TJ  = 150°C 200 A
PD Maximum Power Dissipation (IGBT) TC  = 25°C, 390 W
TJ  = 150°C
tsc Short Circuit Withstand Time > 10 µs
TJ Maximum IGBT Junction Temperature 150 °C
TJOP Maximum Operating Junction Temperature Range -40 to +150 °C
Tstg Storage Temperature Range -40 to +125 °C

Absolute Maximum Ratings of Freewheeling Diode

VRRM Repetitive Peak Reverse Voltage Preliminary Data 650 V
Diode Continuous Forward Current TC  = 25°C 200
IF Diode Continuous Forward Current TC  = 100°C 100 A
IFM Diode Maximum Forward Current 200 A

Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified)

Parameter Test Conditions Min Typ Max Unit
BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA 650 V
ICES Collector to Emitter VGE  = 0V,VCE    = VCES 1 mA
Leakage  Current
IGES Gate to Emitter Leakage Current VGE  = ±30V, VCE   = 0V 200 nA
VGE(th) Gate Threshold Voltage IC  = 1mA, VCE  = VGE 4.5 5.5 V
TJ  = 25°C 1.8 2
VCE(sat) Collector  to  Emitter  Saturation Voltage (Module Level) IC  = 100A, VGE  = 15V TJ  = 125°C 2 V

Switching Characteristics of IGBT

td(on) Turn-on Delay Time TJ  = 25°C 60 ns
tr Turn-on Rise Time TJ  = 25°C 55 ns
td(off) Turn-off Delay Time VCC  = 400V TJ  = 25°C 210 ns
tf Turn-off  Fall Time IC  = 100A TJ  = 25°C 65 ns
Eon Turn-on Switching Loss RG  = 10Ω TJ  = 25°C 1.2 mJ
Eoff Turn-off Switching Loss VGE = ±15V TJ  = 25°C 1 mJ
Qg Total Gate Charge Inductive Load TJ  = 25°C 500 nC
Rgint Integrated gate resistor f  = 1M; TJ  = 25°C 6.9
Vpp = 1V
Cies Input Capacitance TJ  = 25°C 3.9
VCE = 25V
Coes Output Capacitance VGE = 0V TJ  = 25°C 0.35 nF
Cres Reverse Transfer f = 1MHz TJ  = 25°C 0.25
Capacitance
RθJC Thermal Resistance, Junction-to-Case (IGBT) 0.32 °C/W

Electrical and Switching Characteristics of Freewheeling Diode

VF TJ  = 25°C 1.35
Diode Forward Voltage IF  = 100A , V
VGE  = 0V TJ   = 125°C 1.2
trr Diode Reverse Recovery Time IF  = 100A, TJ  = 25°C 80 ns
Irr Diode Peak Reverse Recovery Current di/dt = 550A/µs, Vrr = 400V, TJ  = 25°C 30 A
Qrr Diode Reverse Recovery Charge TJ  = 25°C 6.2 uC
RθJC Thermal Resistance, Junction-to-Case (Diode) 0.75 °C/W

Module Characteristics

Parameter

Min.

Typ.

Max.

Unit

Viso

Isolation Voltage

(All Terminals Shorted),f = 50Hz, 1minute

2500

 

 

V

RθCS

Case-To-Sink(Conductive Grease Applied)

 

0.1

 

°C/W

M

Power Terminals Screw: M5

3.0

 

5.0

N·m

M

Mounting Screw: M6

4.0

 

6.0

N·m

G

Weight

 

160

 

g

Internal Circuit:

Internal Circuit

Package Dimension
Package Dimension




Product Categories : Semiconductor Module Devices > IGBT Module

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