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Home > Products > Semiconductor Module Devices > IGBT Module > UPS 1700V IGBT Power Module
UPS 1700V IGBT Power Module
UPS 1700V IGBT Power Module
UPS 1700V IGBT Power Module
UPS 1700V IGBT Power Module
  • UPS 1700V IGBT Power Module
  • UPS 1700V IGBT Power Module
  • UPS 1700V IGBT Power Module
  • UPS 1700V IGBT Power Module

UPS 1700V IGBT Power Module

    Unit Price: USD 135 - 195 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-450B170E53

VCES1700V

IC450V

ICRM900A

VGES±20V

Ptot3260W

ICES1.0mA

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity10000

TransportationOcean,Air

Supply Ability10000

PortShanghai

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

IGBT Power Module YZPST-450B170E53

Applications
Inverter for motor drive
AC and DC servo drive amplifier
UPS (Uninterruptible Power Supplies)

Features

 Low Vce(sat) with SPT+ IGBT technology

 Vce(sat) with positive temperature coefficient

 Including fast & soft recovery anti-parallel FWD

 High short circuit capability(10us)

 Low inductance module structure

 Maximum junction temperature 175C

IGBT Module YZPST-450B170E53(1)



Absolute Maximum Ratings

Parameter

 

Symbol

 

Conditions

 

Value

 

Unit

Collector-Emitter Voltage

VCES

VGE=0V, IC =1mA, Tvj=25C

1700

V

Continuous Collector Current

IC

Tc=100C

450

A

Peak Collector Current

ICRM

tp=1ms

900

A

Gate-Emitter Voltage

VGES

Tvj=25C

±20

V

Total Power Dissipation

(IGBT-inverter)

Ptot

Tc=25C

Tvjmax=175C

3260

W

IGBT Characteristics

Parameter Value Unit
Symbol Conditions Min. Typ. Max.
Gate-emitter Threshold Voltage VGE(th) VGE=VCE, IC =24mA,Tvj=25C 5.4 6.2 7.4 V
Collector-Emitter Cut-off Current ICES VCE=1700V,VGE=0V, Tvj=25C 1 mA
Ic=450A,VGE=15V, Tvj=25C 2.4 2.75 V
Collector-Emitter VCE(sat) Ic=450A,VGE=15V, Tvj=125C 2.8 V
Saturation Voltage Ic=450A,VGE=15V, Tvj=150C 2.9 V
Gate Charge G 2.7 uC
Input Capacitance Cies 30 nF
Output Capacitance Coes VCE=25V,VGE =0V, 1.65 nF
Reverse Transfer Capacitance Cres f=1MHz, Tvj=25C 1.08 nF
Gate-Emitter leakage current IGES VCE=0 V, VGE=20 V, Tvj = 25C 400 nA
Turn-on Delay Time td(on) 510 ns
Rise Time tr IC =450 A 180 ns
Turn-off Delay Time td(off) VCE = 900 V 620 ns
Fall Time tf VGE = ±15V 185 ns
Energy Dissipation During Turn-on Time Eon RG = 3.3Ω 126 mJ
Energy Dissipation During Turn-off Time Eoff Tvj=25C 89 mJ
Turn-on Delay Time td(on) 512 ns
Rise Time tr IC =450 A 190 ns
Turn-off Delay Time td(off) VCE = 900 V 712 ns
Fall Time tf VGE = ±15V 350 ns
Energy Dissipation During Turn-on Time Eon RG = 3.3Ω 162 mJ
Energy Dissipation During Turn-off Time Eoff Tvj=125C 125 mJ

Turn-on Delay Time

td(on)

 

 

 

IC =450 A

VCE = 900 V

VGE = ±15V

RG = 3.3Ω

Tvj=150C


515


ns

Rise Time

tr


200


ns

Turn-off Delay Time

td(off)


730


ns

Fall Time

tf


430


ns

Energy Dissipation During Turn-on Time

Eon


175


mJ

Energy Dissipation During Turn-off Time

Eoff


130


mJ

 SC Data

 Isc

Tp10us,VGE=15V,

Tvj=150C,Vcc=1000V,

VCEM1700V


 1450


 A

Diode Characteristics

Parameter Value Unit
Symbol Conditions Min. Typ. Max.
Diode DC Forward Current IF Tc=100C 450 A
Diode Peak Forward Current IFRM tp=1ms 900 A
IF=450A,Tvj=25C 1.85 V
IF=450A,Tvj=125C 1.92 V
Forward Voltage VF IF=450A,Tvj=150C 1.9 V
Recovered Charge Qrr IF =450 A 110 uC
VR=900V
Peak Reverse Recovery Current Irr -diF/dt =2500A/us 348 A
Reverse Recovery Energy Erec Tvj=25C 64.2 mJ
Recovered Charge Qrr IF =450 A 160 uC
VR=900V
Peak Reverse Recovery Current Irr -diF/dt =2500A/us 394 A
Reverse Recovery Energy Erec Tvj=125C 94.4 mJ
Recovered Charge Qrr IF =450 A 176 uC
VR=900V
Peak Reverse Recovery Current Irr -diF/dt =2500A/us 410 A
Reverse Recovery Energy Erec Tvj=150C 103.2 mJ


Circuit Diagram

IGBT power Module YZPST-450B170E53(2)

Package Dimensions
IGBT power Module YZPST-450B170E53(3)

Product Categories : Semiconductor Module Devices > IGBT Module

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