| Unit Price: | USD 38 - 45 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CIF,CFR |
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Basic Info
Model No.: YZPST-P150HFN120AT1R6
Brand: YZPST
Place Of Origin: China
VcEs: 1200V
VGEs: ±20V
Lc: 150A
CRM: 300A
Ptot: 1500W
VcE(sat: 2.2V
VgE(th: 2.5V
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 100000000
Transportation: Ocean,Land,Express,Others
Place of Origin: CHINA
Supply Ability: 100000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CIF,CFR
Product Description
P/N:YZPST-P150HFN120AT1R6
62mm module with fast Trench/Fieldstop IGBT and Fast Recovery Diode
Features
■ Low Switching Losses
■ LoW VcEsal
■ Low VcE(sat with Positive Temperature Coefficient
Applications
■ Motor Drives
UPS Systems
■ High Power Inverter
Equivalent Circuit Schematic
IGBT -Inverter
Maximum Rated Values
| Symbol | Description | Conditions | Values | Unit |
| VcEs | Collector-Emitter Voltage | Tv=25℃ | 1200 | V |
| VGEs | Gate-Emitter Peak Voltage | Ty=25℃ | ±20 | V |
| lc | Continuous DC Collector Current | Tc=100℃ | 150 | A |
| CRM | Repetitive Peak Collector Current | tp=1ms | 300 | A |
| Ptot | Total Power Dissipation | Tc=25℃,Tyjmax=175℃ | 1500 | W |
Symbol Values Description Conditions Min. Typ. Max. Unit VcE(sat Collector-Emitter Saturation Voltage VcE=15V,Ic=150A,Tv=25℃ 2.2 V Vge=15V,Ic=150A,Tv=125℃ 2.5 V VgE(th Gate Threshold Voltage VgE=VcE,Ic=3.8mA 5 5.8 6.5 V IcEs Collector-Emitter Cut-Off Current VcE=1200V,VgE=0V mA GES Gate-Emitter Leakage Current VcE=20V,VcE=0V 600 nA RGint Internal Gate Resistor Ty=25℃ 3.8 Ω Cies Input Capacitance 11.5 nF Coes Output Capacitance Vce=25V,Vce=0V,f=1MHz 1 nF Cres Reverse Transfer Capacitance 0.4 nF tt(on) Turn-on Delay Time 139 ns Vcc=600V t Turn-on Rise Time VoE=±15V 37 nS d(a) Turn-off Delay Time Ic=150A 192 nS t Turn-off Fall Time Rg=2.0g 128 nS Eon Turn-on Switching Loss Inductive Load 7.9 -= mJ E₀ff Turn-off Switching Loss Ty=25℃ 8.4 mJ Isc Short Circuit Data VcE≤15V,Vcc=600V 518 A tp≤10μs,Tv=25℃ Thermal Resistance,Junction to Case Per IGBT —-- 0.1 —-- K/W Twop Virtual Junction Temperature Under Switching -40 150 ℃
Diode -Inverter
Maximum Rated Values
| Symbol | Description | Conditions | Values | Unit |
| VRRM | Repetitive Peak Reverse Voltage | Tv=25℃ | 1200 | V |
| lF | Continuous DC Forward Current |
| 150 | A |
| lFRM | Repetitive Peak Collector Current | tp=1ms | 300 | A |
Characteristic Values
| Symbol | Values | |||||
| Description | Conditions | Min. | Typ | Max. | Unit | |
| Forward Voltage | lr=150A,Vse=0V,Tv=25℃ | 2.5 | V | |||
| VF | l=150A,Vge=0V,Tv=125℃ | 1.9 | —-- | V | ||
| RM | Peak Reverse Recovery Current | —-- | 42 | A | ||
| Qr | Recovered Charge | l=150A,Vg=600V,Vge=-15V | 3.1 | uC | ||
| Erec | Reverse Recovery Energy | Ty=25℃ | 1.1 | mJ | ||
| Tuop | Virtual Junction Temperature | Under Switching | -40 | 150 | ℃ | |
Package Outlines(mm)
Product Categories : Semiconductor Module Devices > IGBT Module
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