| Unit Price: | USD 140 - 190 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,Paypal,T/T |
| Incoterm: | FOB,CFR,CIF |
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Basic Info
Model No.: YZPST-600HFX170C6S
Brand: YZPST
Place Of Origin: China
VCES: 1700V
VGES: ±20V
ICM: 1200A
PD: 4166W
VRRM: 1700V
IF: 600A
IFM: 1200A
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 1000000
Transportation: Ocean,Land,Express,Others
Place of Origin: CHINA
Supply Ability: 1000000
Port: SHANGHAI
Payment Type: L/C,Paypal,T/T
Incoterm: FOB,CFR,CIF
Product Description
1700V/600A 2 in one-package
General Description
IGBT Power Module provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
general inverters and UPS.
Features
. Low VCE(sat) Trench IGBT technology
. 10μs short circuit capability
. VCE(sat) with positive temperature coefficient
. Maximum junction temperature 175oC
. Low inductance case
. Fast & soft reverse recovery anti-parallel FWD
. Isolated copper baseplate using DBC technology
Typical Applications
. Inverter for motor drive
. AC and DC servo drive amplifier
. Uninterruptible power supply
IGBT
| Symbol | Description | Value | Unit |
| VCES | Collector-Emitter Voltage | 1700 | V |
| VGES | Gate-Emitter Voltage | ±20 | V |
| IC | Collector Current TC=25oC TC= 100oC | 1069 600 | A |
| ICM | Pulsed Collector Current tp=1ms | 1200 | A |
| PD | | 4166 | W |
| Symbol | Description | Value | Unit |
| VRRM | Repetitive Peak Reverse Voltage | 1700 | V |
| IF | Diode Continuous Forward Current | 600 | A |
| IFM | Diode Maximum Forward Current tp=1ms | 1200 | A |
| Symbol | Description | Value | Unit |
| Tjmax | Maximum Junction Temperature | 175 | oC |
| Tjop | Operating Junction Temperature | -40 to +150 | oC |
| TSTG | Storage Temperature Range | -40 to +125 | oC |
| VISO | Isolation Voltage RMS,f=50Hz,t=1min | 4000 | V |
IGBT Characteristics TC=25oC unless otherwise noted
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| IC=600A,VGE=15V, Tj=25oC | 1.85 | 2.2 | ||||
| VCE(sat) | Collector to Emitter | IC=600A,VGE=15V, Tj=125oC | 2.25 | V | ||
| Saturation Voltage | IC=600A,VGE=15V, Tj=150oC | 2.35 | ||||
| VGE(th) | Gate-Emitter Threshold Voltage | IC= 12.0mA,VCE=VGE, Tj=25oC | 5.6 | 6.2 | 6.8 | V |
| ICES | Collector Cut-Off | VCE=VCES,VGE=0V, | 5 | mA | ||
| Current | Tj=25oC | |||||
| IGES | Gate-Emitter Leakage Current | VGE=VGES,VCE=0V, Tj=25oC | 400 | nA | ||
| RGint | Internal Gate Resistance | 1.3 | Ω | |||
| Cies | Input Capacitance | VCE=25V,f=1MHz, | 72.3 | nF | ||
| Cres | Reverse Transfer | VGE=0V | 1.75 | nF | ||
| Capacitance | ||||||
| QG | Gate Charge | VGE=- 15…+15V | 5.66 | μC | ||
| td(on) | Turn-On Delay Time | 170 | ns | |||
| tr | Rise Time | 67 | ns | |||
| td(off) | Turn-Off Delay Time | VCC=900V,IC=600A, RG= 1.0Ω,VGE=±15V, Tj=25oC | 527 | ns | ||
| tf | Fall Time | 138 | ns | |||
| Eon | Turn-On Switching | 154 | mJ | |||
| Loss | ||||||
| Eoff | Turn-Off Switching | 132 | mJ | |||
| Loss | ||||||
| td(on) | Turn-On Delay Time | 168 | ns | |||
| tr | Rise Time | 80 | ns | |||
| td(off) | Turn-Off Delay Time | VCC=900V,IC=600A, RG= 1.0Ω,VGE=±15V, Tj= 125oC | 619 | ns | ||
| tf | Fall Time | 196 | ns | |||
| Eon | Turn-On Switching | 236 | mJ | |||
| Loss | ||||||
| Eoff | Turn-Off Switching | 198 | mJ | |||
| Loss | ||||||
| td(on) | Turn-On Delay Time | 192 | ns | |||
| tr | Rise Time | 80 | ns | |||
| td(off) | Turn-Off Delay Time | VCC=900V,IC=600A, RG= 1.0Ω,VGE=±15V, Tj= 150oC | 640 | ns | ||
| tf | Fall Time | 216 | ns | |||
| Eon | Turn-On Switching | 259 | mJ | |||
| Loss | ||||||
| Eoff | Turn-Off Switching | 215 | mJ | |||
| Loss | ||||||
| tP≤10μs,VGE=15V, | ||||||
| ISC | SC Data | Tj=150oC,VCC= 1000V, VCEM≤1700V | 2400 | A |
Product Categories : Semiconductor Module Devices > IGBT Module
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