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Mr. John chang
Leave a messageUnit Price: | USD 52 - 73 / Piece/Pieces |
---|---|
Payment Type: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Basic Info
Model No.: YZPST-FZ600R17KE4
Brand: YZPST
Place Of Origin: China
IC TC=100°C: 600A
VCES: 1700V
VGES: ±30V
IC TC=25°C: 1200A
PD: 2660W
Tsc: >10µs
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 100000000
Transportation: Ocean,Land,Express,Others
Place of Origin: CHINA
Supply Ability: 100000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
Absolute Maximum Ratings of IGBT
VCES | Collector to Emitter Voltage | 1700 | V | |
VGES | Continuous Gate to Emitter Voltage | ±30 | V | |
IC |
Continuous Collector Current | TC = 25°C | 1200 |
A |
TC = 100°C | 600 | |||
ICM | Pulse Collector Current | TJ = 150°C | 1200 | A |
PD | Maximum Power Dissipation (IGBT) | TC = 25°C, TJ = 150°C | 2660 | W |
tsc | Short Circuit Withstand Time | > 10 | µs | |
TJ | Maximum IGBT Junction Temperature | 150 | °C | |
TJOP | Maximum Operating Junction Temperature Range | -40 to +150 | °C | |
Tstg | Storage Temperature Range | -40 to +125 | °C |
Absolute Maximum Ratings of Freewheeling Diode
VRRM | Repetitive Peak Reverse Voltage Preliminary Data | 1700 | V | |
IF |
Diode Continuous Forward Current | TC = 25°C | 1200 |
A |
TC = 100°C | 600 | |||
IFM | Diode Maximum Forward Current | 1200 | A |
Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified)
Parameter | Test Conditions | Min | Typ | Max | Unit | ||
BVCES | Collector to Emitter Breakdown Voltage | VGE = 0V, IC = 1mA | 1700 |
|
| V | |
ICES | Collector to Emitter Leakage Current | VGE = 0V,VCE = VCES |
|
| 5 | mA | |
IGES | Gate to Emitter Leakage Current | VGE = ±30V, VCE = 0V |
|
| 400 | nA | |
VGE(th) | Gate Threshold Voltage | IC = 1mA, VCE = VGE | 4.5 |
| 5.7 | V | |
VCE(sat) |
Collector to Emitter Saturation Voltage (Module Level) |
IC = 600A, VGE = 15V | TJ = 25°C |
| 3.00 | 3.20 |
V |
TJ = 125°C |
| 3.60 |
|
Product Categories : Semiconductor Module Devices > IGBT Module
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