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YANGZHOU POSITIONING TECH CO., LTD.
Home > Products > Semiconductor Module Devices > IGBT Module > UL Recognized 100A 1200V IGBT Module
UL Recognized 100A 1200V IGBT Module
UL Recognized 100A 1200V IGBT Module
UL Recognized 100A 1200V IGBT Module
UL Recognized 100A 1200V IGBT Module
  • UL Recognized 100A 1200V IGBT Module
  • UL Recognized 100A 1200V IGBT Module
  • UL Recognized 100A 1200V IGBT Module
  • UL Recognized 100A 1200V IGBT Module

UL Recognized 100A 1200V IGBT Module

    Unit Price: USD 19.5 - 22.5 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-100HF120TK-G1

BrandYZPST

VCES1250V

VGES±30V

IC TC=25°C150A

IC TC=80°C100A

ICM200A

Ptot694W

Additional Info

Productivity1000

TransportationOcean,Air

Place of OriginChina

Supply Ability10000

CertificateISO9001-2008,ROHS

HS Code85413000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description




IGBT Moudle YZPST-100HF120TK-G1

       FEATURES

High short circuit capability, self limiting short circuit current
IGBT CHIP(Trench+ Field Stop technology) 
VCE(sat) with positive temperature coefficient Fast switching, Low switching losses
Free wheeling diodes with fast and soft reverse recovery

APPLICATIONS

High frequency switching application
Welding converters
Motion/servo control
UPS systems

UL Recognized 100A 1200V IGBT Module

ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified

Symbol

Parameter

Test Conditions

Values

Unit

IGBT

VCES

Collector - Emitter Voltage

TVj=25°C

1250

V

VGES

Gate - Emitter Voltage

 

±30

V

 

IC

 

DC Collector Current

TC=25°C

150

A

TC=80°C

100

A

ICM

Repetitive Peak Collector Current

tp=1ms

200

A

Ptot

Power Dissipation Per IGBT

694

W

Diode

VRRM

Repetitive Reverse Voltage

TVj=25°C

1250

V

 

IF(AV)

 

Average Forward Current

TC=25°C

150

A

TC=80°C

100

A

IFRM

Repetitive Peak Forward Current

tp=1ms

200

A


MODULE CHARACTERISTICS  TC=25°C unless otherwise specified

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

TVj max

Max. Junction Temperature

 

150

°C

TVj op

Operating Temperature

 

-40

 

150

°C

Tstg

Storage Temperature

 

-40

125

°C

Visol

Insulation Test Voltage

AC, t=1min

3000

V

Torque

To-Sink

Recommended M6

3

 

5

N·m

Torque

To-Terminal

Recommended M5

2.5

 

5

N·m

Weight

 

 

 

176

 

g

CIRCUIT DIAGRAM

100A IGBT Module



PACKAGE OUTLINE

1200V IGBT Module






Product Categories : Semiconductor Module Devices > IGBT Module

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