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Home > Products > Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR) > Table glass passivation process TO-247 SCR 1200V
Table glass passivation process TO-247 SCR 1200V
Table glass passivation process TO-247 SCR 1200V
Table glass passivation process TO-247 SCR 1200V
  • Table glass passivation process TO-247 SCR 1200V
  • Table glass passivation process TO-247 SCR 1200V
  • Table glass passivation process TO-247 SCR 1200V

Table glass passivation process TO-247 SCR 1200V

    Unit Price: USD 0.55 - 0.75 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-40TPS12

BrandYZPST

Place Of OriginChina

IT (RMS)40A

VDRM / VRRM1200V

IGT≤35mA

ITSM460A

IGM4A

PGM5W

PG(AV)1W

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity1000000

TransportationOcean,Land,Air

Supply Ability1000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

SCR YZPST-40TPS12

Product features

Table glass passivation process,

The back (anode) electrode  metal: Ti-Ni-Ag   

 The Positive (gate, anode ) electrode metal: AL

The main purposes

Alternating current switch,

AC DC power converter,

The control of electric heating

Motor speed control

Package

TO-247

SCR

MainFeature (Tj=25℃)

Symbol

Value

Unit

IT (RMS)

40

A

VDRM   / VRRM

1200

V

IGT

35

mA

Absolute ratings (Limiting Values)

Symbol

Parameter

Value

Unit

IT (RMS)

RMS on-state current (180°conduction angle)

40

A


ITSM

 

Non repetitive surge peak on-state

Current (tp= 10ms)

460

A

IGM

Peak gate current(tp=20us)

4

A

PGM

Peak gate power

5

W

PG(AV)

Average gate power

1

W

Tstg

Tj

Storage temperature

Operating junction temperature

-40--+ 150 -40--+ 125

SCR YZPST-40TPS12

Thermai Resistances

Symbol

Parameter

 

Value

Unit

 

Rth (j-c)

 

Junction to case

 

TO-247

 

0.95

 

/W

Electrical characteristicsTj=25 unless otherwise stated

Symbol

Test Conditions

Value

Unit

Min

Type

Max

IGT

VD= 12V, RL=33 Ω

----

-----

35

mA

VGT

VD= 12V, RL=33 Ω

-----

-----

1.5

V

VGD

VD=VDRM, RL=3.3KΩ, RGK= 1KΩ,Tj=125

0.2

-----

-----

V

H

IT=500mA

-----

-----

75

mA

L

IG= 1.2IGT

-----

-----

150

mA

dV/dt

VD=67%VDRM, GateOpen,  Tj=110℃

1000

 

-----

 

-----

v/ μs

VTM

IT=80A,tp=380 μs

-----

-----

1.6

V

dI/dt

IG=2IGT

50

-----

-----

A/ μs

I2T

Tp= 10ms

-----

-----

1060

A2 S

IDRM

VD=VDRM

Tj=25℃

-----

-----

10

μA

Tj=125℃

-----

-----

4

mA

 

VRRM

VR=VRRM

Tj=25℃

-----

-----

10

μA

Tj=125℃

-----

-----

4

mA


Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)

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