Contact Supplier
Mr. John chang
Leave a messageUnit Price: | USD 0.02 - 0.03 / Piece/Pieces |
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Payment Type: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Basic Info
Model No.: YZPST-CR03
Brand: YZPST
Application: Microphone
Supply Type: Original Manufacturer, Odm, Other
Reference Materials: Photo, Datasheet, Eda/Cad Models
Package Type: Surface Mount
Installation Method: Through Hole, Not Applicable
FET Function: Silicon Carbide (Sic), Not Applicable
Configuration: Not Applicable
Tstg: -40 ~150℃
Tj: -40~125℃
VDRM: 1400V
VRRM: 1400V
VDSM: VDRM +100V
IT(RMS): 1.25A
ITSM: 20A
Additional Info
Packaging: For more detailed product information and transaction information, please contact our email address : info@yzpst.com
Productivity: 1000000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 10000
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
SOT-223-2L Package Mechanical Data ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Storage junction temperature range Tstg -40 ~150 ℃ Operating junction temperature range Tj -40~125 ℃ Repetitive peak off-state voltage (T =25℃) VDRM 1400 V Repetitive peak reverse voltage (T =25℃) VRRM 1400 V Non repetitive surge peak Off-state voltage VDSM VDRM +100 V Non repetitive peak reverse voltage VRSM VRRM +100 V RMS on-state current IT(RMS) 1.25 A Non repetitive surge peak on-state current (180° conduction angle, F=50Hz) ITSM 20 A I2t value for fusing (tp=10ms) I2t 2.0 A2S Critical rate of rise of on-state current (I =2×IGT, tr ≤ 100 ns) di/dt 50 A/μS Peak gate current IGM 1.0 A Average gate power dissipation PG(AV) 0.1 W Maximum device temperature for solderingPurposes(for 10 seconds maximum) TL 260 ℃ ESD level HBM Class 3 (4000-16000V) Humidity sensitive level MSL Three-level (30℃,60%RH,168h) Thermal Resistances Symbol Parameter Value Unit Rth(j-a) junction to ambient(DC) 60 ℃/W Rth(j-t) Junction to tab (DC) 25 ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified) Symbol Test Condition Value Unit MIN. TYP. MAX. IGT V =12V R =140Ω 20 50 100 µA VGT - 0.8 1.0 V VGD VD=VDRM Tj=125℃ R=1KΩ 0.2 V IL IG=1.2IGT - - 6 mA IH IT=50mA - - 5 mA dV/dt VD=600V ,RGK=1KΩ, Tj=110℃ 100 - - V/μs STATIC CHARACTERISTICS Symbol Parameter Value(MAX.) Unit VTM ITM =2.5A tp=380μs Tj =25℃ 1.5 V IDRM VD=VDRM VR=VRRM Tj =25℃ 5 μA IRRM Tj =125℃ 0.5 mA
SOT-223-2L Package Mechanical Data
Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)
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