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YANGZHOU POSITIONING TECH CO., LTD.
TO220 NPN Type Transistor 2SC2073
TO220 NPN Type Transistor 2SC2073
TO220 NPN Type Transistor 2SC2073
  • TO220 NPN Type Transistor 2SC2073
  • TO220 NPN Type Transistor 2SC2073
  • TO220 NPN Type Transistor 2SC2073

TO220 NPN Type Transistor 2SC2073

    Unit Price: USD 0.08 - 0.12 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-2SC2073

BrandYZPST

VCBO150V

VCEO150V

VEBO5V

IC1.5A

PTOT75W

Tj150℃

Tstg-55-+150℃

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity10000

TransportationOcean,Air

Place of OriginChina

Supply Ability100000

CertificateISO9001-2015,ROHS

HS Code85413000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

NPN Type Transistor 2SC2073

DESRCRIPTION:
The 2SC2073 is a NPN type transistor, used as a power switch tube for electronic ballasts and electronic energy-saving lamps. It has the characteristics of low switching loss, high reliability, good high temperature characteristics, suitable switching speed, low reverse leakage, etc.
NPN Type Transistor

ABSOLUTE MAX I MUM RATINGS

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

150

V

VCEO

Collector-Emitter Voltage

150

V

VEBO

Emitter-Base Voltage

5

V

IC

Continuous Collector Current

1.5

A

PTOT

Total dissipation at Tcase=25 ℃

75

W

Tj

Junction Temperature

150

Tstg

Storage Temperature Range

-55-150

ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

Symbol

Parameter

Test Condition

Value

Unit

Min

Type

Max

V(BR)CBO

Collector-Base Breakdown Voltage

IC=1mA

150

 

 

V

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC=0.1mA

150

 

 

V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE=1mA

-5

 

 

V

ICBO

Collector Cutoff Current

VCB=150V, IE=0

 

 

5

μA

ICEO

Collector Cutoff Current

VCE=150V, IC=0

 

 

5

μA

IEBO

Emitter Cutoff Current

VEB=5V, IC=0

 

 

5

μA

hFE

DC Current Gain

VCE=10V, IC=0.5A

40

 

140

 

VCE(sat)

Collector-Base Breakdown Voltage

IC=0.5A, IB=50mA

 

 

0.85

V

VBE(sat)

Base-Emitter Saturation Voltage

IC=0.5A, IB=50mA

 

 

1.5

V

a: tp300μs,δ≤2%

PACKAGE MECHANICAL DATA

NPN Type Transistor


Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)

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