Communicate with Supplier? Supplier
John chang Mr. John chang
What can I do for you?
Chat Now Contact Supplier
YANGZHOU POSITIONING TECH CO., LTD.
NPN silicon power transistors 13005D
NPN silicon power transistors 13005D
NPN silicon power transistors 13005D
  • NPN silicon power transistors 13005D
  • NPN silicon power transistors 13005D
  • NPN silicon power transistors 13005D

NPN silicon power transistors 13005D

    Unit Price: USD 0.08 - 0.12 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

Download:

Contact Now

Basic Info

Model No.YZPST-13005D

BrandYZPST

VCBO700V

VCEO400V

VEBO9V

IC3A

Icm6A

PTOT75W

Tj150℃

Tstg-55—150℃

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity10000

TransportationOcean,Air

Place of OriginChina

Supply Ability100000

CertificateISO9001-2015,ROHS

HS Code85413000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

NPN SILICON POWER TRANSISTORS 13005D
●DESRCRIPTION:
The 13005D is an NPN transistor used in electronic ballasts and electronic energy saving -lamps. It has the characteristics of low switching loss, high reliability, good high temperature characteristics, suitable switching speed, high breakdown voltage and low reverse leakage.

Silicon Power Transistors

●ABSOLUTE MAX I MUM RATINGS

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

700

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

9

V

IC

Continuous Collector Current

3

A

Icm

Collector Pulse CurrentTp5ms

6

A

PTOT

 

Total dissipation at Tcase=25 ℃

TO-126SD

50

W

TO-220

75

Tj

Junction Temperature

150

Tstg

Storage Temperature Range

-55150

●ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

Symbol

Parameter

Test Condition

Value

Unit

Min

Type

Max

ICBO

Collector Cutoff Current

VCB= 700 VIE=0

 

 

0.1

mA

ICEO

Base Cutoff Current

VCE= 400 VIc=0

 

 

0.1

mA

IEBO

Emitter Cutoff Current

VEB= 9 VIC=0

 

 

0.1

mA

VCBO

Collector-Base Breakdown Voltage

IC= 0.1mA

700

 

 

V

VCEO

Collector-Emitter Breakdown Voltage

IC= 0.1mA

400

 

 

V

VEBO

Emitter-Base Breakdown Voltage

IB= 0.1mA

9

 

 

V

hFE

DC Current Gain

IC= 0.5A,VCE= 5V

15

 

35

 

a

VCE sat

Collector-Base Breakdown Voltage

IC= 2A,IB= 0.5A

 

 

1

V

a

VBE sat

Base-Emitter Saturation Voltage

IC= 2A,IB= 0.5A

 

 

1.5

V

ts

Storage Time

UI9600Ic=0.5A

2

 

7

us

fT

Transition Frequency

VCE=10VIC=0.2A F=1MHz

5

 

 

MHz

aPulse Testtp 300usδ≤2%

●PACKAGE MECHANICAL DATA

Silicon Power TransistorsNPN Silicon Power Transistors

Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)

Email to this supplier
  • Mr. John chang
  • Your message must be between 20-8000 characters

Home > Products > Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR) > NPN silicon power transistors 13005D
Send Inquiry
*
*

Home

Product

Whatsapp

About Us

Inquiry

苏ICP备05018286号-1
We will contact you immediately

Fill in more information so that we can get in touch with you faster

Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.

Send