| Unit Price: | USD 0.019 - 0.026 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
Download:
Basic Info
Model No.: YZPST-100-8
Brand: YZPST
Application: Not Applicable
Supply Type: Original Manufacturer, Odm, Agency, Retailer
Reference Materials: Datasheet, Photo, Eda/Cad Models
Package Type: Surface Mount
Installation Method: Not Applicable
FET Function: Not Applicable
Configuration: Not Applicable
Tstg: -40 ~150°C
Tj: -40 ~125°C
VDRM: 900V
VRRM: 900V
IT(RMS): 1.0A
ITSM: 12A
I2t: 0.72A2S
Additional Info
Packaging: For more detailed product information and transaction information, please contact our email address : info@yzpst.com
Productivity: 100000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 10000
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
| ABSOLUTE MAXIMUM RATINGS | |||
| Parameter | Symbol | Value | Unit |
| Storage junction temperature range | Tstg | -40 ~ 150 | ℃ |
| Operating junction temperature range | Tj | -40~ 125 | ℃ |
| repetitive surge peak Off-state voltage | VDRM | 900 | V |
| repetitive peak reverse voltage | VRRM | 900 | V |
| RMS on-state current | IT(RMS) | 1.0 | A |
| Non repetitive surge peak on-state current ( 180° conduction angle, F=50Hz,t=10ms/60Hz,8 3ms) | ITSM | 12 | A |
| I2t value for fusing (tp= 10ms) | I2t | 0.72 | A2S |
| Critical rate of rise of on-state current (I =2×IGT, tr ≤ 100 ns) | di/dt | 50 | A/μS |
| Peak gate current | IGM | 0.5 | A |
| Average gate power dissipation | PG(AV) | 0.1 | W |
| Maximum device temperature for solderingPurposes (for 10 seconds maximum) | TL | 260 | ℃ |
| ESD level | HBM | Class 3 (4000-16000V) |
|
| Humidity sensitive level | MSL | Three-level (30℃,60%RH,168h) |
|
| Thermal Resistances | ||||
| Symbol | Parameter | Value | Unit | |
| TO-92 | 70 | |||
| Rth(j-c) | Junction to tab (DC) | SOT-223 | 25 | ℃/W |
| ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified) | |||||
| Symbol | Test Condition | Value | Unit | ||
| MlV | TYP | MAX | |||
| IGT | V = 12V R = 140Ω | 20 | 40 | 120 | 4A |
| VGT | - | - | 1 0 | V | |
| VGD | VD=VDRM Tj=125℃ R= 1KΩ | 0.2 | - | - | V |
| IL | IG= 1.2IGT | - | - | 6 | mA |
| IH | IT=50mA | - | - | 5 | mA |
| dV/dt | VD=2/3VDRM Gate Open Tj=125℃ | 50 | - | - | V/ μs |
Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)
Hot Products
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Contact Now
