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Home > Products > Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR) > High dv/dt rate 2P4M/WR0205 2A Sensitive SCRs
High dv/dt rate 2P4M/WR0205 2A Sensitive SCRs
High dv/dt rate 2P4M/WR0205 2A Sensitive SCRs
High dv/dt rate 2P4M/WR0205 2A Sensitive SCRs
High dv/dt rate 2P4M/WR0205 2A Sensitive SCRs
High dv/dt rate 2P4M/WR0205 2A Sensitive SCRs
  • High dv/dt rate 2P4M/WR0205 2A Sensitive SCRs
  • High dv/dt rate 2P4M/WR0205 2A Sensitive SCRs
  • High dv/dt rate 2P4M/WR0205 2A Sensitive SCRs
  • High dv/dt rate 2P4M/WR0205 2A Sensitive SCRs
  • High dv/dt rate 2P4M/WR0205 2A Sensitive SCRs

High dv/dt rate 2P4M/WR0205 2A Sensitive SCRs

    Unit Price: USD 0.065 - 0.08 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF
    Min. Order: 100 Piece/Pieces

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Basic Info

BrandYZPST

IT(RMS)2a

IGT≤200μa

VDRM/VRRM600v

Tstg-40~150℃

Tj-40~110℃

ITSM20a

I2t2a2s

Additional Info

PackagingFor more detailed product information and transaction information, please contact our email address : info@yzpst.com

Productivity10000

TransportationOcean,Air

Place of OriginChina

Supply Ability10000

CertificateISO9001-2008,ROHS

HS Code85413000

PortShanghai

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description


2P4M/WR0205 2A Sensitive SCRs

YZPST-2P4M/WR0205

DESCRIPTION:

The 2P4M 2A SCR series provide high dv/dt rate with strong resistance to electromagnetic interface.

They are especially recommended for use on residual current circuit breaker, straight hair, igniter etc.

 YZPST-2P4M(WR0205).jpg

MAIN FEATURES:

symbol

value

unit

IT(RMS)

2.0

A

IGT

≤200

μA

VDRM/VRRM

600

V

ABSOLUTE MAXIMUM RATINGS:

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40~150

Operating junction temperature range

Tj

-40~110

Repetitive peak off-state voltage (Tj=25)

VDRM

600

V

Repetitive peak reverse voltage (Tj=25)

VRRM

600

V

RMS on-state current

IT(RMS)

2

A

Non repetitive surge peak on-state current (full cycle, F=50Hz)

ITSM

20

A

I2t value for fusing (tp=10ms)

I2t

2

A2s

Critical rate of rise of on-state current (IG=2×IGT)

dI/dt

50

A/μs

 

Peak gate current

IGM

0.2

A

Average gate power dissipation

PG(AV)

0.1

W

Peak gate power

PGM

0.5

W

 

YZPST-2P4M(WR0205)-2.jpg














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