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YANGZHOU POSITIONING TECH CO., LTD.
Home > Products > Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR) > high reliability PNP Type Transistor 2SA940
high reliability PNP Type Transistor 2SA940
high reliability PNP Type Transistor 2SA940
high reliability PNP Type Transistor 2SA940
  • high reliability PNP Type Transistor 2SA940
  • high reliability PNP Type Transistor 2SA940
  • high reliability PNP Type Transistor 2SA940

high reliability PNP Type Transistor 2SA940

    Unit Price: USD 0.08 - 0.12 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-2SA940

BrandYZPST

VCBO-150V

VCEO-150V

VEBO-5V

IC-1.5A

PTOT25W

Tj150℃

Tstg-55—150℃

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity10000

TransportationOcean,Air

Place of OriginChina

Supply Ability100000

CertificateISO9001-2015,ROHS

HS Code85413000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description


PNP Type Transistor 2SA940

DESRCRIPTION:
The 2SA940 is a PNP type transistor, used as a power switch tube for electronic ballasts and electronic energy-saving lamps. It has the characteristics of low switching loss, high reliability, good high temperature characteristics, suitable switching speed, high breakdown voltage, low reverse leakage, etc.
high reliability PNP Type Transistor 2SA940


ABSOLUTE MAX I MUM RATINGS

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-150

V

VCEO

Collector-Emitter Voltage

-150

V

VEBO

Emitter-Base Voltage

-5

V

IC

Continuous Collector Current

-1.5

A

PTOT

Total dissipation at Tcase=25 ℃

25

W

Tj

Junction Temperature

150

Tstg

Stora-1.5ge Temperature Range

-55150

ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

Symbol

Parameter

Test Condition

Value

Unit

Min

Type

Max

V(BR)CBO

Collector-Base Breakdown Voltage

IC=-1mA

-150

 

 

V

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC=-1mA

-150

 

 

V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE=-1mA

- 5

 

 

V

ICBO

Collector Cutoff Current

VCB=-150V, IE=0

 

 

-5

μA

ICEO

Collector Cutoff Current

VCE=-150V, IC=0

 

 

-5

μA

IEBO

Emitter Cutoff Current

VEB=-5V, IC=0

 

 

-5

μA

hFE

DC Current Gain

VCE=-10V, IC=-0.5A

40

 

140

 

VCE(sat)

Collector-Base Breakdown Voltage

IC=-0.5A, IB=-50mA

 

 

-0.85

V

VBE(sat)

Base-Emitter Saturation Voltage

IC=-0.5A, IB=-50mA

 

 

-1.5

V

a: tp300μs,δ≤2%

PACKAGE MECHANICAL DATA

TO220 PNP Type Transistor

Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)

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