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Home > Products > Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR) > High voltage capacity S3530 35A SCR TO220F
High voltage capacity S3530 35A SCR TO220F
High voltage capacity S3530 35A SCR TO220F
High voltage capacity S3530 35A SCR TO220F
High voltage capacity S3530 35A SCR TO220F
  • High voltage capacity S3530 35A SCR TO220F
  • High voltage capacity S3530 35A SCR TO220F
  • High voltage capacity S3530 35A SCR TO220F
  • High voltage capacity S3530 35A SCR TO220F

High voltage capacity S3530 35A SCR TO220F

    Unit Price: USD 0.6 - 1.2 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-S3530

BrandYZPST

Place Of OriginChina

Tstg-40 ~ 150℃

Tj-40~ 125℃

VDRM1600V

VRRM1600V

VDSMVDRM +100V

VRSMVRRM +100V

IT(RMS)35A

ITSM300A

IT(AV)23A

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000

TransportationOcean,Land,Others

Place of OriginCHINA

Supply Ability1000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

P/N: YZPST-S3530 35A SCRs
FEATURES
 High thermal cycling performance
 High voltage capacity

 Very high current surge capability 

APPLICATIONS

 Line rectifying 50/60 Hz
 Softstart AC motor control
 DC Motor control
 Power converter
 AC power control

 Lighting and temperature control

YZPST-S3530

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Storage junction  temperature range

Tstg

-40 ~ 150

Operating junction temperature range

Tj

-40~ 125

Repetitive peak off-state voltage (T =25℃)

VDRM

1600

V

Repetitive peak reverse voltage (T =25℃)

VRRM

1600

V

Non repetitive surge peak Off-state voltage

VDSM

VDRM +100

V

Non repetitive peak reverse voltage

VRSM

VRRM +100

V

RMS on-state current (T = 110℃)

IT(RMS)

35

A

Non repetitive surge peak on-state current

(180° conduction angle, F=50Hz)

ITSM

300

A

Average on-state current (180° conduction angle)

IT(AV)

23

A

I2t value for fusing (tp= 10ms)

I2t

450

A2 S

Critical rate of rise of on-state current

(I =2×IGT, tr ≤ 100 ns)

dI/dt

50

A/μS

Peak gate current

IGM

4

A

Average gate power dissipation

PG(AV)

1

W

Thermal Resistances

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case (DC)

2.5

℃/W

ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified)

Symbol

Test Condition

 

Value

Unit

IGT

V = 12V R = 140Ω

MAX.

30

mA

VGT

MAX.

1.3

V

VGD

VD=VDRM Tj= 125

MIN.

0.2

V

IL

IG= 1.2IGT

MAX.

160

mA

IH

IT=500mA

MAX.

120

mA

dV/dt

VD=2/3VDRM Gate Open  Tj=125℃

MIN.

500

V/μs

STATIC CHARACTERISTICS
Symbol Parameter Value(MAX.) Unit
VTM ITM =35A tp=380μs Tj =25℃ 1.5 V
IDRM VD=VDRM VR=VRRM Tj =25℃ 20 μA
IRRM Tj =125℃ 4 mA

TO-220F Package Mechanical Data

TO-220F Package Mechanical Data

Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)

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