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YANGZHOU POSITIONING TECH CO., LTD.
Home > Products > Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR) > 25A SCR have good performance at dv/dt and reliability
25A SCR have good performance at dv/dt and reliability
25A SCR have good performance at dv/dt and reliability
25A SCR have good performance at dv/dt and reliability
25A SCR have good performance at dv/dt and reliability
  • 25A SCR have good performance at dv/dt and reliability
  • 25A SCR have good performance at dv/dt and reliability
  • 25A SCR have good performance at dv/dt and reliability
  • 25A SCR have good performance at dv/dt and reliability

25A SCR have good performance at dv/dt and reliability

    Unit Price: USD 0.2 - 0.35 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: CFR,FOB,CIF

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Basic Info

Model No.YZPST-25TTS12FP

BrandYZPST

Place Of OriginChina

IT(RMS)25A

VDRM/VRRM1200V

IGT10-20mA

ITSM250A

I2t312A2 S

Di/dt100A/μs

VDRM VRRM1200V

IGM4A

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000

TransportationOcean,Land

Supply Ability1000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermCFR,FOB,CIF

Product Description

SCR P/N:YZPST-25TTS12FP

DESRCRIPTION:
Due to separation diffusion process and mesa
technology and Glass passivation, these devices
have good performance at dv/dt and reliability.
These series of    SCR are specifically designed
for domestic lighting, heating and motor speed
controllers.

MAIN FEATURES

Symbol

Value

Unit

IT(RMS)

25

A

VDRM/VRRM

1200

V

IGT

10-20

mA

ABSOLUTE MAX I MUM RATINGS

Symbol

PARAMETER

Value

Unit

IT(RMS)

RMS on-state current(all conduction angles)

TO-220AB

Tc=90

25

A

ITSM

Non repetitive surge peak on-state current (half sine cycle, Tj=25)

F=50HZ    tp=10ms

250

A

I2t

I2t Value for fusing

tp=10ms

312

A2 S

di/dt

Repetitive rate of rise of on-state

Current after triggering

F=120HZ,Tj=125

100

A/μs

VDRM

VRRM

Repetitive Peak Off-state Voltage

Repetitive Peak Reverse Voltage

Tj=25

1200

V

IGM

Peak gate current, tp=20us,

Tj=125

4

A

PG(AV)

Average gate power dissipation

Tj=125

1

W

Tstg

Storage junction temperature range

-40 to +150

Tj

Operating junction temperature range

-40 to +125

ELECTRICAL CHARACTERISTICS

Symbol

Test Condition

Quadrant

Value

Unit

IGT

VAK=12V, R=50Ω, T=25°C

MAX

25

mA

VGT

VAK=12V, R=50Ω, T=25°C

MAX

1.2

V

VGD

VD=VDRM RL=3.5KΩ Tj=125

MIN

0.2

V

IH

IT=100mA, IG=50mA

MAX

50

mA

IL

 

IG=1.2IGT

 

MAX

 

80

 

mA

dv/dt

VD=67% VDRM gate open(Tj=125)

MIN

1000

V/μs

STATIC    CHARACTERISTICS

Symbol

Parameter

Value

Unit

VTM

IT=50A, IG=50mA, T=25°C

MAX

1.50

V

IDRM/IRRM

VD=VDRM VR=VRRM, Tj=25

MAX

5

μA

H.T.IDRM/IRRM

VD=VDRM VR=VRRM, Tj=125

MAX

1

mA

Rth(j-c)

Junction to case(DC), TO-220A

MAX

0.9

/W

YZPST-25TTS12FP SCR

Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)

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