| Unit Price: | USD 0.2 - 0.35 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | CFR,FOB,CIF |
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Basic Info
Model No.: YZPST-25TTS12FP
Brand: YZPST
Place Of Origin: China
IT(RMS): 25A
VDRM/VRRM: 1200V
IGT: 10-20mA
ITSM: 250A
I2t: 312A2 S
Di/dt: 100A/μs
VDRM VRRM: 1200V
IGM: 4A
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 1000000
Transportation: Ocean,Land
Supply Ability: 1000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: CFR,FOB,CIF
Product Description
MAIN FEATURES
| Symbol | Value | Unit |
| IT(RMS) | 25 | A |
| VDRM/VRRM | 1200 | V |
| IGT | 10-20 | mA |
ABSOLUTE MAX I MUM RATINGS
| Symbol | PARAMETER | Value | Unit | ||
| IT(RMS) | RMS on-state current(all conduction angles) | TO-220AB | Tc=90℃ | 25 | A |
| ITSM | Non repetitive surge peak on-state current (half sine cycle, Tj=25℃) | F=50HZ tp=10ms | 250 | A | |
| I2t | I2t Value for fusing | tp=10ms | 312 | A2 S | |
| di/dt | Repetitive rate of rise of on-state Current after triggering | F=120HZ,Tj=125℃ | 100 | A/μs | |
| VDRM VRRM | Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage | Tj=25℃ | 1200 | V | |
| IGM | Peak gate current, tp=20us, | Tj=125℃ | 4 | A | |
| PG(AV) | Average gate power dissipation | Tj=125℃ | 1 | W | |
| Tstg | Storage junction temperature range | -40 to +150 | ℃ | ||
| Tj | Operating junction temperature range | -40 to +125 | ℃ | ||
ELECTRICAL CHARACTERISTICS
| Symbol | Test Condition | Quadrant | Value | Unit | |
| IGT | VAK=12V, R=50Ω, T=25°C | Ⅰ | MAX | 25 | mA |
| VGT | VAK=12V, R=50Ω, T=25°C | Ⅰ | MAX | 1.2 | V |
| VGD | VD=VDRM RL=3.5KΩ Tj=125℃ | MIN | 0.2 | V | |
| IH | IT=100mA, IG=50mA | MAX | 50 | mA | |
| IL |
IG=1.2IGT | Ⅰ |
MAX |
80 |
mA |
| dv/dt | VD=67% VDRM gate open(Tj=125℃) | MIN | 1000 | V/μs | |
STATIC CHARACTERISTICS
| Symbol | Parameter | Value | Unit | |
| VTM | IT=50A, IG=50mA, T=25°C | MAX | 1.50 | V |
| IDRM/IRRM | VD=VDRM VR=VRRM, Tj=25℃ | MAX | 5 | μA |
| H.T.IDRM/IRRM | VD=VDRM VR=VRRM, Tj=125℃ | MAX | 1 | mA |
| Rth(j-c) | Junction to case(DC), TO-220A | MAX | 0.9 | ℃/W |
Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)
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