| Unit Price: | USD 0.7 - 0.86 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
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Basic Info
Model No.: YZPST-30TPS12
Brand: YZPST
Place Of Origin: China
IGT: ≤35 mA
IT(RMS): 30 A, 30A
VRRM: 1200V
VDRM: 1200V
IT(AV): 20A
ITSM: 300A
I2t: 450A2s
DI /dt: 50A/μs
PG(AV): 1W
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 1000000
Transportation: Ocean,Land
Supply Ability: 1000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
30TPS12 Thyristors P/N:YZPST-30TPS12
High Voltage 30TPS12 30A SCR TO-247
The 30TPS12 High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature.Typical applications are in input rectification (soft start) and these products are designed to be used with input diodes, switches and output rectifiers,which are available in identical package outlines.
Symbol
Symbol Value IGT ≤35 mA IT(RMS) 30 A VRRM 1200 V
ABSOLUTE MAX I MUM RATINGS (TC = 25°C, unless otherwise specified)
| Symbol | PARAMETER | Value | Unit |
| V DRM | Repetitive peak off-state voltage (Tj =25℃) | 1200 | V |
| VRRM | Repetitive peak reverse voltage (Tj=25℃) | 1200 | V |
| IT(AV) | Average on-state current (180° conduction angle) | 20 | A |
| IT(RMS) | RMS on-state current(full sine wave) | 30 | A |
| ITSM | Non repetitive surge peak on-state current (180° conduction angle, F=50Hz ，TC=85℃) | 300 | A |
| I2t | I2t for Fusing (t = 10 ms) | 450 | A2s |
| dI /dt | Critical rate of rise of on-state current (I =2 ×IGT, tr ≤ 100 ns) | 50 | A/μs |
| IGM | Peak Gate Current | 4 | A |
| PG(AV) | Average Gate Power dissipation | 1 | W |
| Tstg | Storage junction temperature range | -40 ~ 150 | °C |
| TJ | Operating junction temperature range | -40 ~ 125 | °C |
PACKAGE MECHANICAL DATA
Symbol Test Condition Value Unit Min Max IGT V = 12V R =33Ω 35 mA VGT 1.3 V VGD VD=VDRM Tj=125℃ 0.2 V IL IG= 1.2IGT 180 mA IH IT=500mA 120 mA dV/dt VD=2/3VDRM Gate Open Tj=125℃ 500 V/μs VTM ITM =45A tp=380μs 1.7 V IDRM VD=VDRM VR=VRRM 20 μA IRRM 4 mA 
Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)
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