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Home > Products > Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR) > YZPST-BT151 Silicon Controlled Rectifierr SCR 7.5A
YZPST-BT151 Silicon Controlled Rectifierr SCR 7.5A
YZPST-BT151 Silicon Controlled Rectifierr SCR 7.5A
YZPST-BT151 Silicon Controlled Rectifierr SCR 7.5A
YZPST-BT151 Silicon Controlled Rectifierr SCR 7.5A
  • YZPST-BT151 Silicon Controlled Rectifierr SCR 7.5A
  • YZPST-BT151 Silicon Controlled Rectifierr SCR 7.5A
  • YZPST-BT151 Silicon Controlled Rectifierr SCR 7.5A
  • YZPST-BT151 Silicon Controlled Rectifierr SCR 7.5A

YZPST-BT151 Silicon Controlled Rectifierr SCR 7.5A

    Unit Price: USD 0.09 - 0.135 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-BT151

BrandYZPST

ApplicationNot Applicable

Supply TypeOriginal Manufacturer, Agency

Reference MaterialsPhoto, Datasheet

Package TypeSurface Mount

Installation MethodThrough Hole, Not Applicable

FET FunctionNot Applicable

ConfigurationNot Applicable

Additional Info

PackagingFor more detailed product information and transaction information, please contact our email address : info@yzpst.com

Productivity100000

TransportationOcean,Air

Place of OriginChina

Supply Ability10000

CertificateISO9001-2008,ROHS

HS Code85413000

PortShanghai

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

SCRS

YZPST-BT151

YZPST-BT151 Silicon Controlled Rectifierr SCR 7.5A



●Main Feature (Tjj=2255℃)

Symbol

Value

Unit

IT(AV)

7.5

A

VDRM / VRRM

 600

V

IGT

1 to 20

mA


●Absolute ratings (Limiting Values)

Symbol

Parameter

Value

Unit

IT(RMS)

RMS on-state current (180°conduction angle)

12

A

IT(AV)

AV on-state current (180°conduction angle)

7.5

A

ITSM

Non repetitive surge peak on-state

Current (tp=10ms)

100

A

I2t

 (tp=10ms)

50

A2S

IGM

Peak gate current(tp=20us)

2

A

PGM

Peak gate power

5

W

PG(AV)

Average gate power

0.5

W

Tstg

Tj

Storage temperature

Operating junction temperature

-40--+150

-40--+125


●Thermai Resistances

Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case

1.3

K/W

Rth (j-a)

Junction to ambient

60

K/W

●Electrical characteristics (Tj=25℃ unless otherwise stated)

Symbol

Test Conditions

Value

Unit

Min

Type

Max

IGT

VD=6V, RL=100Ω

1

5

20

uA

VGT

VD=12V, RL=100Ω

-----

0.7

0.8

V

VGD

VD=VDRM, RL=3.3KΩ Tj=110

0.2

-----

-----

V

IH

IT=100mA  Gate Open

-----

9

20

mA

dV/dt

VD=67%VDRM, GateOpen, Tj=125

50

125

-----

v/μs

VTM

IT=16A,tp=380μs

-----

-----

1.7

V

IDRM

IRRM

VD=VDRM

VR=VRRM

Tj=25

-----

-----

20

uA

Tj=110

-----

-----

300

uA

●Measure of  package (TO-220E)

YZPST-BT151 Silicon Controlled Rectifierr SCR 7.5A












Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)

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