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Home > Products > Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR) > Highly sensitive triggering levels X0405 SCR
Highly sensitive triggering levels X0405 SCR
Highly sensitive triggering levels X0405 SCR
Highly sensitive triggering levels X0405 SCR
Highly sensitive triggering levels X0405 SCR
  • Highly sensitive triggering levels X0405 SCR
  • Highly sensitive triggering levels X0405 SCR
  • Highly sensitive triggering levels X0405 SCR
  • Highly sensitive triggering levels X0405 SCR

Highly sensitive triggering levels X0405 SCR

    Unit Price: USD 0.11 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF
    Min. Order: 1000 Piece/Pieces
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Basic Info

Model No.YZPST-X0405

BrandYZPST

IT(RMS)4.0A

VDRM VRRM600V

IGT200µA

Tstg-40 ~150℃

TJ-40~125℃

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity1000

TransportationOcean,Air

Place of OriginChina

Supply Ability10000

CertificateISO9001-2008,ROHS

HS Code85413000

PortShanghai

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description


Silicon Controlled Rectifier (SCR)

YZPST-X0405

DESCRIPTION:

Thanks to highly sensitive triggering levels, the

X0405 SCR series is suitable for all applications

where the available gate current is limited, such as

ground fault circuit interruptors, overvoltage

crowbar protection in low power supplies,

capacitive ignition circuits, ...


MAIN FEATURES

Symbol

Value

Unit

IT(RMS)

4.0

A

VDRM VRRM

600

V

IGT

200

µA

ABSOLUTE MAXIMUM RATINGS


Parameter

Symbol

Value

Unit

Storage junctiontemperature range

Tstg

-40 ~150

Operating junction temperature range

Tj

-40~125

Repetitive peak off-state voltage (T =25℃)

VDRM

600

V

Repetitive peak reverse voltage (T =25℃)

VRRM

600

V

Non repetitive surge peak Off-state voltage

VDSM

VDRM +100

V

Non repetitive peak reverse voltage

VRSM

VRRM +100

V

RMS on-state current (T =60℃)

IT(RMS)

4.0

A

Non repetitive surge peak on-state current

(180° conduction angle, F=50Hz)

ITSM

30

A

Average on-state current (180° conduction angle)

IT(AV)

2.5

A

I2t value for fusing (tp=10ms)

I2t

4.5

A2S

Critical rate of rise of on-state current

(I =2×IGT, tr 100 ns)

dI/dt

50

A/μS

Peak gate current

IGM

1.2

A

Average gate power dissipation

PG(AV)

0.2

W

ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified)

Symbol

Test Condition

 

Value

Unit

IGT

V =12V R =140Ω

MAX.

200

µA

VGT

MAX.

0.8

V

VGD

VD=VDRM Tj=125℃ R=1KΩ

MIN.

0.1

V

IL

IG=1.2IGT

MAX.

6

mA

IH

IT=50mA

MAX.

5

mA

dV/dt

VD=2/3VDRM Gate Open  Tj=125℃

MIN.

15

V/μs

STATIC CHARACTERISTICS

Symbol

Parameter

Value(MAX.)

Unit

VTM

ITM =8.0A tp=380μs

Tj =25℃

1.8

V

IDRM

VD=VDRM VR=VRRM

 

Tj =25℃

5

μA

IRRM

Tj =125℃

1

mA

Thermal Resistances

Symbol

Parameter

Value(MAX.)

Unit

Rth(j-a)

junction to  ambient

60

℃/W

Rth(j-t)

Junction to tab (DC)

20

Ordering information scheme

YZPST-X0405


Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)

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