| Unit Price: | USD 0.11 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
| Min. Order: | 1000 Piece/Pieces |
Basic Info
Model No.: YZPST-X0405
Brand: YZPST
IT(RMS): 4.0A
VDRM VRRM: 600V
IGT: 200µA
Tstg: -40 ~150℃
TJ: -40~125℃
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 1000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 10000
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
Silicon Controlled Rectifier (SCR)
YZPST-X0405
DESCRIPTION:
Thanks to highly sensitive triggering levels, the
X0405 SCR series is suitable for all applications
where the available gate current is limited, such as
ground fault circuit interruptors, overvoltage
crowbar protection in low power supplies,
capacitive ignition circuits, ...
MAIN FEATURES
| Symbol | Value | Unit |
| IT(RMS) | 4.0 | A |
| VDRM VRRM | 600 | V |
| IGT | 200 | µA |
| Parameter | Symbol | Value | Unit |
| Storage junctiontemperature range | Tstg | -40 ~150 | ℃ |
| Operating junction temperature range | Tj | -40~125 | ℃ |
| Repetitive peak off-state voltage (T =25℃) | VDRM | 600 | V |
| Repetitive peak reverse voltage (T =25℃) | VRRM | 600 | V |
| Non repetitive surge peak Off-state voltage | VDSM | VDRM +100 | V |
| Non repetitive peak reverse voltage | VRSM | VRRM +100 | V |
| RMS on-state current (T =60℃) | IT(RMS) | 4.0 | A |
| Non repetitive surge peak on-state current (180° conduction angle, F=50Hz) | ITSM | 30 | A |
| Average on-state current (180° conduction angle) | IT(AV) | 2.5 | A |
| I2t value for fusing (tp=10ms) | I2t | 4.5 | A2S |
| Critical rate of rise of on-state current (I =2×IGT, tr ≤ 100 ns) | dI/dt | 50 | A/μS |
| Peak gate current | IGM | 1.2 | A |
| Average gate power dissipation | PG(AV) | 0.2 | W |
ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified)
| Symbol | Test Condition |
| Value | Unit |
| IGT | V =12V R =140Ω | MAX. | 200 | µA |
| VGT | MAX. | 0.8 | V | |
| VGD | VD=VDRM Tj=125℃ R=1KΩ | MIN. | 0.1 | V |
| IL | IG=1.2IGT | MAX. | 6 | mA |
| IH | IT=50mA | MAX. | 5 | mA |
| dV/dt | VD=2/3VDRM Gate Open Tj=125℃ | MIN. | 15 | V/μs |
STATIC CHARACTERISTICS
| Symbol | Parameter | Value(MAX.) | Unit | |
| VTM | ITM =8.0A tp=380μs | Tj =25℃ | 1.8 | V |
| IDRM | VD=VDRM VR=VRRM
| Tj =25℃ | 5 | μA |
| IRRM | Tj =125℃ | 1 | mA | |
Thermal Resistances
| Symbol | Parameter | Value(MAX.) | Unit |
| Rth(j-a) | junction to ambient | 60 | ℃/W |
| Rth(j-t) | Junction to tab (DC) | 20 |
Ordering information scheme
Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)
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