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Home > Products > Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR) > The high ability of current shock resistance 600V BT152-600R SCR
The high ability of current shock resistance 600V BT152-600R SCR
The high ability of current shock resistance 600V BT152-600R SCR
The high ability of current shock resistance 600V BT152-600R SCR
The high ability of current shock resistance 600V BT152-600R SCR
The high ability of current shock resistance 600V BT152-600R SCR
  • The high ability of current shock resistance 600V BT152-600R SCR
  • The high ability of current shock resistance 600V BT152-600R SCR
  • The high ability of current shock resistance 600V BT152-600R SCR
  • The high ability of current shock resistance 600V BT152-600R SCR
  • The high ability of current shock resistance 600V BT152-600R SCR

The high ability of current shock resistance 600V BT152-600R SCR

    Unit Price: USD 0.13 - 0.15 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-BT152-600R

BrandYZPST

Place Of OriginChina

IT (RMS)20A

VRRM600V

IT(AV)13A

ITSM200A

IGM4A

PGM5W

PG(AV)1W

Tstg-40--+150℃

Tj-40--+125℃

VDRM600V

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity100000000

TransportationOcean,Land,Others

Place of OriginCHINA

Supply Ability100000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

BT152-600R/800R

The high ability of current shock resistance 600V BT152-600R SCR

YZPST-BT152-600R

●Product features
Silicon unilateral device NPNP four layer structure,
P+ on the through diffusion isolation,
Single mesa structure (Single Mesa),
Table glass passivation process,
The back   (anode)   electrode metal: Ti-Ni-Ag
The high ability of   current shock resistance

●The main purposes
Alternating current switch,
AC DC power converter,
The control of electric heating
Motor speed control
● Package
TO-220M1    TO-220F

SCR YZPST-BT152-600R

Main    Feature (Tj=25℃)

Symbol Value Unit
IT (RMS) 20 A
VDRM   VRRM 600/800 V
IGT 200 uA

Absolute ratings (Limiting Values)

Symbol Parameter Value Unit
IT (RMS) RMS on-state current (180 °conduction angle) 20 A
IT(AV) AV on-state current (180 °conduction angle) 13 A
ITSM Non repetitive surge peak on-state 200 A
Current (tp=10ms)
IGM Peak gate current(tp=20us) 4 A
PGM Peak gate power 5 W
PG(AV) Average gate power 1 W
Tstg Storage temperature 110
Tj Operating junction temperature 85
Thermai Resistances

Symbol Parameter Value Unit
TO-220M1 2.2
Rth (j-c) Junction to case TO-220F 2.5 /W
Electrical characteristics (Tj=25℃ unless otherwise stated)

Symbol Test Conditions Value Unit
Min Type Max
IGT VD=12V, RL=33Ω ---- 5 25 mA
VGT VD=12V, RL=33Ω ----- ----- 1.3 V
VGD VD=VDRM, RL=3.3KΩ, RGK=1KΩ,Tj=125℃ 0.2 ----- ----- V
IH IT=500mA ----- ----- 30 mA
IL IG=1.2IGT ----- ----- 60 mA
dV/dt VD=67%VDRM, GateOpen,  Tj=110℃ 500 v/ μs
----- -----
VTM IT=30A,tp=380 μs ----- ----- 1.6 V
dI/dt IG=2IGT 50 ----- ----- A/μs
I2T Tp=10ms ----- ----- 200 A2S
Tj=25℃ ----- ----- 10 μA
IDRM VD=VDRM Tj=125℃ ----- ----- 1 mA
Tj=25℃ ----- ----- 10 μA
IRRM VR=VRRM Tj=125℃ ----- ----- 1 mA
Measure of   package
((TO--220F))
TO-220

Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)

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Home > Products > Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR) > The high ability of current shock resistance 600V BT152-600R SCR
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