IGBT CHIP 75A 1200V IGBT Module

YZPST-75HF120TK-G1

75A 1200V IGBT Module

FEATURES
High short circuit capability, self limiting short circuit current

High short circuit capability ,self limiting short circuit current

IGBT CHIP(Trench+ Field Stop technology)

VcE(sat) with postive temperature cofficient

Fast switching and short tail current, Low switching losses

Free wheeling diodes with fast and soft reverse recovery

Temperature sense included

 

APPLICATIONS

High frequency switching application

Welding converters

Motion/servo control

UPS systems

ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified

Symbol	Parameter	Test Conditions	Values	Unit
IGBT
VCES	Collector - Emitter Voltage	TVj=25°C	1250	V
VGES	Gate - Emitter Voltage		±30	V
IC	DC Collector Current	TC=25°C	115	A
		TC=80°C	75	A
ICM	Repetitive Peak Collector Current	tp=1ms	150	A
Ptot	Power Dissipation Per IGBT		500	W
Diode
VRRM	Repetitive Reverse Voltage	TVj=25°C	1250	V
IF(AV)	Average Forward Current	TC=25°C	115	A
		TC=80°C	75	A
IFRM	Repetitive Peak Forward Current	tp=1ms	150	A
I2t		TVj =125°C, t=10ms, VR=0V	2810	A2s

MODULE CHARACTERISTICS

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
TVj max	Max. Junction Temperature				150	°C
TVj op	Operating Temperature		-40		150	°C
Tstg	Storage Temperature		-40		125	°C
Visol	Insulation Test Voltage	AC, t=1min		3000		V
Torque	To-Sink	Recommended M6	3		5	N·m
Torque	To-Terminal	Recommended M5	2.5		5	N·m
Weight				176		g

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