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Home > Products > Semiconductor Plastic Package > Silicon Transistor > 650V 100A Trench Field-Stop Technology IGBT
650V 100A Trench Field-Stop Technology IGBT
650V 100A Trench Field-Stop Technology IGBT
650V 100A Trench Field-Stop Technology IGBT
650V 100A Trench Field-Stop Technology IGBT
  • 650V 100A Trench Field-Stop Technology IGBT
  • 650V 100A Trench Field-Stop Technology IGBT
  • 650V 100A Trench Field-Stop Technology IGBT
  • 650V 100A Trench Field-Stop Technology IGBT

650V 100A Trench Field-Stop Technology IGBT

    Unit Price: USD 3.5 - 4.5 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-D100H065AT1S3

Place Of OriginChina

VCES650V

VGES±20V

VCEsat, Tvj=251.75V

IC(TC=100℃ )100A

ICM200A

Tvjmax175 ℃

PackageTO247-3L

IC(TC=25℃)125A

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

Trench Field-Stop Technology IGBT 

YZPST-D100H065AT1S3

Features

    650V, 100A

    VCE(sat)(typ.)  =1.75V@VGE=15V, IC=100A

    Maximum Junction Temperature 175 

    Pb-free Lead Plating; RoHS Compliant


Applications

    Solar Converters

    Uninterrupted Power Supply

    Welding Converters

    Mid to High Range Switching Frequency Converters

Key Performance and Package Parameters

Order codes

VCE

IC

VCEsat, Tvj=25 

Tvjmax

Marking

Package

D100H065AT1S3

650V

100A

1.75V

175   

D100H65AT1

TO247-3L

Absolute Maximum Ratings

Symbol Parameter Value Unit
VCES Collector-Emitter Voltage 650 V
VGES Gate-Emitter Voltage ±20 V
IC Continuous Collector Current (TC=25  ) 125 A
Continuous Collector Current (TC=100    ) 100 A
ICM Pulsed Collector Current (Note 1) 200 A
Diode Forward Current (TC=25   ) 125 A
IF Diode Forward Current (TC=100   ) 100 A
Maximum Power Dissipation (TC=25   ) 385 W
PD Maximum Power Dissipation (TC=100   ) 192 W
TJ Operating Junction Temperature Range -40 to 175   
TSTG Storage Temperature Range -55 to 150   

Electrical Characteristics (Tc=25 unless otherwise noted.)


Symbol Parameter Conditions Min. Typ. Max. Unit
BVCES Collector-Emitter VGE=0V, IC=200uA 650 V
Breakdown Voltage --- ---
ICES Collector-Emitter Leakage Current VCE=650V, VGE=0V 1 mA
--- ---
Gate Leakage Current, Forward VGE=20V, VCE=0V 600 nA
--- ---
IGES Gate Leakage Current, Reverse VGE=-20V, VCE=0V 600 nA
--- ---
VGE(th) Gate Threshold Voltage VGE=VCE , IC=750uA 4.2 --- 6 V
VCE(sat) Collector-Emitter VGE=15V, IC=100A, Tj=25  --- 1.75 2.2 V
Saturation Voltage VGE=15V, IC=100A, Tj=125  --- 2.05 --- V
td(on) Turn-on Delay Time --- 35 --- ns
tr Turn-on Rise Time VCC=400V --- 155 --- ns
td(off) Turn-off Delay Time VGE=±15V --- 188 --- ns
tf Turn-off Fall Time IC=100A --- 69 --- ns
Eon Turn-on Switching Loss RG=8 --- 4.35 --- mJ
Eoff Turn-off Switching Loss Inductive Load --- 1.11 --- mJ
Ets Total Switching Loss TC=25   --- 5.46 --- mJ
Cies Input Capacitance VCE=25V --- 7435 --- pF
Coes Output Capacitance VGE=0V --- 237 --- pF
Cres Reverse Transfer f =1MHz 128 pF
Capacitance --- ---

Symbol Parameter Conditions Min. Typ. Max. Unit
IF=100A, Tj=25  --- 1.65 2.2 V
VF Diode Forward Voltage IF=100A, Tj=150  --- 1.4 --- V
trr Diode Reverse Recovery Time 201 ns
VR=400V --- ---
IF=100A
Irr Diode peak Reverse dIF/dt=200A/us 19 A
Recovery Current TC=25  --- ---
Qrr Diode Reverse Recovery Charge 2.45 uC
--- ---

Note1    Repetitive rating, pulse width limited by maximum junction temperature

Package Information

650V 100A Trench Field-Stop Technology IGBT



Product Categories : Semiconductor Plastic Package > Silicon Transistor

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