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Home > Products > Semiconductor Plastic Package > Silicon Transistor > TO-220F 2SA1930 Silicon PNP transistor High fT complementary pair with 2SC5171
TO-220F 2SA1930 Silicon PNP transistor High fT complementary pair with 2SC5171
TO-220F 2SA1930 Silicon PNP transistor High fT complementary pair with 2SC5171
TO-220F 2SA1930 Silicon PNP transistor High fT complementary pair with 2SC5171
TO-220F 2SA1930 Silicon PNP transistor High fT complementary pair with 2SC5171
TO-220F 2SA1930 Silicon PNP transistor High fT complementary pair with 2SC5171
  • TO-220F 2SA1930 Silicon PNP transistor High fT complementary pair with 2SC5171
  • TO-220F 2SA1930 Silicon PNP transistor High fT complementary pair with 2SC5171
  • TO-220F 2SA1930 Silicon PNP transistor High fT complementary pair with 2SC5171
  • TO-220F 2SA1930 Silicon PNP transistor High fT complementary pair with 2SC5171
  • TO-220F 2SA1930 Silicon PNP transistor High fT complementary pair with 2SC5171

TO-220F 2SA1930 Silicon PNP transistor High fT complementary pair with 2SC5171

    Unit Price: USD 0.65 - 0.95 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-2SA1930

BrandYZPST

Place Of OriginChina

VCBO-180V

VCEO-180V

VEBO-5V

IC-2A

IB-1A

PC2W

PC(Tc=25℃)20W

Tj150℃

Tstg-55~150℃

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000

TransportationOcean,Land

Place of OriginCHINA

Supply Ability1000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

Silicon PNP Transistor in a TO-220F Plastic Package. P/N:YZPST-2SA1930

Silicon PNP transistor in a TO-220F Plastic Package. 

Features

High fT, complementary pair with 2SC5171.

TO-220F 2SA1930 Silicon PNP transistor High fT complementary pair with 2SC5171

Absolute Maximum Ratings(Ta=25)


Parameter


Symbol


Rating


Unit

Collector to Base Voltage

VCBO

-180

V

Collector to Emitter Voltage

VCEO

-180

V

Emitter to Base Voltage

VEBO

-5.0

V

Collector Current - Continuous

IC

-2.0

A

Base Current

IB

-1.0

A

Collector Power Dissipation

PC

2.0

W

Collector Power Dissipation

PC(Tc=25)

20

W

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-55150

Electrical Characteristics(Ta=25)


Parameter

 Symbol


Test Conditions

 Min

 Typ

 Max

Unit

Collector-Emitter Breakdown

Voltage

VCEO

IC=-10mA      IB=0

-180

 

 

V

Collector Cut-Off Current

ICBO

VCB=-180V    IE=0

 

 

-5.0

μA

Emitter Cut-Off Current

IEBO

VEB=-5.0V     IC=0

 

 

-5.0

μA

DC Current Gain

hFE(1)

VCE=-5.0V     IC=-100mA

100

 

320

 

hFE(2)

VCE=-5.0V     IC=-1.0A

50

 

 

 

Collector to Emitter Saturation Voltage

VCE(sat)

IC=-1.0A        IB=-100mA

 

-0.24

-1.0

V

Base to Emitter Voltage

VBE

VCE=-5.0V     IC=-1.0A

 

-0.68

-1.5

V

Transition Frequency

fT

VCE=-5.0V     IC=-300mA

 

200

 

MHz

Collector output capacitance

Cob

VCB=-10V      IE=0

f=1.0MHz

 

26

 

pF

Package Dimensions

Package Dimensions

Product Categories : Semiconductor Plastic Package > Silicon Transistor

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