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Home > Products > Semiconductor Plastic Package > Silicon Transistor > High Blocking Voltage M1A080120L1 TO-247-4 N-Channel SiC Power MOSFET
High Blocking Voltage M1A080120L1 TO-247-4 N-Channel SiC Power MOSFET
High Blocking Voltage M1A080120L1 TO-247-4 N-Channel SiC Power MOSFET
High Blocking Voltage M1A080120L1 TO-247-4 N-Channel SiC Power MOSFET
High Blocking Voltage M1A080120L1 TO-247-4 N-Channel SiC Power MOSFET
High Blocking Voltage M1A080120L1 TO-247-4 N-Channel SiC Power MOSFET
  • High Blocking Voltage M1A080120L1 TO-247-4 N-Channel SiC Power MOSFET
  • High Blocking Voltage M1A080120L1 TO-247-4 N-Channel SiC Power MOSFET
  • High Blocking Voltage M1A080120L1 TO-247-4 N-Channel SiC Power MOSFET
  • High Blocking Voltage M1A080120L1 TO-247-4 N-Channel SiC Power MOSFET
  • High Blocking Voltage M1A080120L1 TO-247-4 N-Channel SiC Power MOSFET

High Blocking Voltage M1A080120L1 TO-247-4 N-Channel SiC Power MOSFET

    Unit Price: USD 4.2 - 4.5 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: CFR,FOB,CIF

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Basic Info

Model No.YZPST-M1A080120L1

BrandYZPST

Place Of OriginChina

VDSmax1200V

VGSmax-10/+25V

VGSop-5/+20V

ID Tc=25℃36A

ID Tc=100℃24A

ID(pulse)80A

PD192W

TJ, TSTG-55 to +150℃

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000000

TransportationOcean,Land,Express,Others,Air

Place of OriginCHINA

Supply Ability100000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermCFR,FOB,CIF

Product Description

N-Channel SiC Power MOSFET
P/N: YZPST-M1A080120L1
Features
High Blocking Voltage with Low On-Resistance
High Speed Switching with Low Capacitance
Easy to Parallel and Simple to Drive
Benefits
Higher System Efficiency
Reduced Cooling Requirements
Increased Power Density
Increased System Switching Frequency
Applications
Power Supplies
High Voltage DC/DC Converters
Motor Drives
Switch Mode Power Supplies

Pulsed Power applications

YZPST-M1A080120L1

Part Number

Package

M1A080120 L1

TO-247-4

Maximum Ratings (TC=25℃ unless otherwise specified)

Symbol Parameter Value Unit Test Conditions Note
VDSmax Drain-Source Voltage 1200 V VGS=0V, ID=100μA
VGSmax Gate-Source Voltage -0.4 V Absolute maximum values
VGSop Gate-Source Voltage -0.25 V Recommended operational values
ID Continuous Drain Current 36 A VGS=20V, Tc=25
24 VGS=20V, Tc=100
ID(pulse) Pulsed Drain Current 80 A Pulse width tp  limited by TJmax
PD Power Dissipation 192 W Tc=25, TJ=150
TJ, TSTG Operating Junction and Storage Temperature -55 to +150

Electrical Characteristics (TC=25℃ unless otherwise specified)

Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-Source Breakdown Voltage 1200 / / V VGS=0V, ID=100μA
VGS(th) Gate Threshold Voltage 2 2.4 4 V VDS=VGS, ID=5mA Fig. 11
/ 1.8 / VDS=VGS, ID=5mA, TJ=150
IDSS Zero Gate Voltage Drain Current / 1 100 µA VDS=1200V, VGS=0V
IGSS+ Gate-Source Leakage Current / 10 250 nA VDS=0V, VGS=25V
IGSS- Gate-Source Leakage Current / 10 250 nA VDS=0V, VGS=-10V
RDS(on) Drain-Source On-State Resistance / 80 98 VGS=20V, ID=20A Fig.
/ 140 / VGS=20V, ID=20A, TJ=150 4,5,6
Ciss Input Capacitance / 1475 / VGS=0V Fig.
Coss Output Capacitance / 94 / pF VDS=1000V 15,16
Crss Reverse Transfer Capacitance / 11 / f=1MHz
Eoss Coss Stored Energy / 52 / µJ VAC=25mV
EON Turn-On Switching Energy / 564 / µJ VDS=800V, VGS=-5V/20V
EOFF Turn-Off Switching Energy / 260 / ID=20A, RG(ext)=2.5Ω, L=200μH
td(on) Turn-On Delay Time / 9.3 /
tr Rise Time / 9.5 / VDS=800V, VGS=-5V/20V, ID=20A RG(ext)=2.5Ω, RL=40Ω
td(off) Turn-Off Delay Time / 18 / ns
tf Fall Time / 7.6 /
RG(int) Internal Gate Resistance / 3.1 / Ω f=1MHz, VAC=25mV
QGS Gate to Source Charge / 24 / VDS=800V
QGD Gate to Drain Charge / 15 / nC VGS=-5V/20V
QG Total Gate Charge / 79 / ID=20A

Reverse Diode Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note
VSD Diode Forward Voltage 3.6 / V VGS=-5V, ISD=10A Fig.   8,9,10
3.3 / VGS=-5V, ISD=10A, TJ=150
IS Continuous Diode Forward Current / 44 A TC=25
trr Reverse Recover Time 35 / ns
Qrr Reverse Recovery Charge 91 / nC VR=800V, ISD=20A
Irrm Peak Reverse Recovery Current 4.5 / A

Package Dimensions

Package TO-247-4

Package TO-247-4

Product Categories : Semiconductor Plastic Package > Silicon Transistor

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