| Unit Price: | USD 4.2 - 4.5 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | CFR,FOB,CIF |
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Basic Info
Model No.: YZPST-M1A080120L1
Brand: YZPST
Place Of Origin: China
VDSmax: 1200V
VGSmax: -10/+25V
VGSop: -5/+20V
ID Tc=25℃: 36A
ID Tc=100℃: 24A
ID(pulse): 80A
PD: 192W
TJ, TSTG: -55 to +150℃
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 1000000000
Transportation: Ocean,Land,Express,Others,Air
Place of Origin: CHINA
Supply Ability: 100000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: CFR,FOB,CIF
Product Description
Pulsed Power applications
Part Number Package M1A080120 L1 TO-247-4
Maximum Ratings (TC=25℃ unless otherwise specified)
Electrical Characteristics (TC=25℃ unless otherwise specified) Reverse Diode Characteristics Package Dimensions Package TO-247-4
Symbol Parameter Value Unit Test Conditions Note VDSmax Drain-Source Voltage 1200 V VGS=0V, ID=100μA VGSmax Gate-Source Voltage -0.4 V Absolute maximum values VGSop Gate-Source Voltage -0.25 V Recommended operational values ID Continuous Drain Current 36 A VGS=20V, Tc=25℃ 24 VGS=20V, Tc=100℃ ID(pulse) Pulsed Drain Current 80 A Pulse width tp limited by TJmax PD Power Dissipation 192 W Tc=25℃, TJ=150℃ TJ, TSTG Operating Junction and Storage Temperature -55 to +150 ℃
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 1200 / / V VGS=0V, ID=100μA VGS(th) Gate Threshold Voltage 2 2.4 4 V VDS=VGS, ID=5mA Fig. 11 / 1.8 / VDS=VGS, ID=5mA, TJ=150℃ IDSS Zero Gate Voltage Drain Current / 1 100 µA VDS=1200V, VGS=0V IGSS+ Gate-Source Leakage Current / 10 250 nA VDS=0V, VGS=25V IGSS- Gate-Source Leakage Current / 10 250 nA VDS=0V, VGS=-10V RDS(on) Drain-Source On-State Resistance / 80 98 mΩ VGS=20V, ID=20A Fig. / 140 / VGS=20V, ID=20A, TJ=150℃ 4,5,6 Ciss Input Capacitance / 1475 / VGS=0V Fig. Coss Output Capacitance / 94 / pF VDS=1000V 15,16 Crss Reverse Transfer Capacitance / 11 / f=1MHz Eoss Coss Stored Energy / 52 / µJ VAC=25mV EON Turn-On Switching Energy / 564 / µJ VDS=800V, VGS=-5V/20V EOFF Turn-Off Switching Energy / 260 / ID=20A, RG(ext)=2.5Ω, L=200μH td(on) Turn-On Delay Time / 9.3 / tr Rise Time / 9.5 / VDS=800V, VGS=-5V/20V, ID=20A RG(ext)=2.5Ω, RL=40Ω td(off) Turn-Off Delay Time / 18 / ns tf Fall Time / 7.6 / RG(int) Internal Gate Resistance / 3.1 / Ω f=1MHz, VAC=25mV QGS Gate to Source Charge / 24 / VDS=800V QGD Gate to Drain Charge / 15 / nC VGS=-5V/20V QG Total Gate Charge / 79 / ID=20A
Symbol Parameter Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 3.6 / V VGS=-5V, ISD=10A Fig. 8,9,10 3.3 / VGS=-5V, ISD=10A, TJ=150℃ IS Continuous Diode Forward Current / 44 A TC=25℃ trr Reverse Recover Time 35 / ns Qrr Reverse Recovery Charge 91 / nC VR=800V, ISD=20A Irrm Peak Reverse Recovery Current 4.5 / A 
Product Categories : Semiconductor Plastic Package > Silicon Transistor
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