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Home > Products > Semiconductor Plastic Package > Silicon Transistor > The MJD31C is Silicon NPN power transistors TO-252
The MJD31C is Silicon NPN power transistors TO-252
The MJD31C is Silicon NPN power transistors TO-252
The MJD31C is Silicon NPN power transistors TO-252
The MJD31C is Silicon NPN power transistors TO-252
The MJD31C is Silicon NPN power transistors TO-252
  • The MJD31C is Silicon NPN power transistors TO-252
  • The MJD31C is Silicon NPN power transistors TO-252
  • The MJD31C is Silicon NPN power transistors TO-252
  • The MJD31C is Silicon NPN power transistors TO-252
  • The MJD31C is Silicon NPN power transistors TO-252

The MJD31C is Silicon NPN power transistors TO-252

    Unit Price: USD 0.06 - 0.08 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-MJD31C

BrandYZPST

Place Of OriginChina

VCBO100V

VCEO100V

VEBO5V

IC3A

ICM5A

IB1A

PTOT15W

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity10000000000

TransportationOcean,Land,Others

Place of OriginCHINA

Supply Ability1000000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

Silicon NPN Power Transistors
P/N: YZPST-MJD31C
DESRCRIPTION:

The MJD31C is Silicon NPN power transistors ,designed for medium power linear switching applications.

YZPST-MJD31C TO-252


ABSOLUTE MAX I MUM RATINGS

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

5

V

IC

Continuous Collector Current

3

A

ICM

Collector current-Pulse

5

A

IB

Base Current

1

A

PTOT

Total dissipation at Tcase=25 

15

W

Tj

Junction Temperature

150

Tstg

Storage Temperature Range

-55 150

ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

Symbol

Parameter

Test Condition

Value

Unit

Min

Type

Max

ICEO

Collector Cutoff Current

VCE= 60 V

 

 

0.3

mA

IEBO

Emitter Cutoff Current

VEB= 5 V

 

 

1

mA

VCEOSUS

Collector-Emitter Sustaining Voltage

IC= 30mA

100

 

 

V

VCEsat

Collector-Emitter Saturation Voltage

IC=3A IB=0.375A

 

 

1.2

V

VBE

Base-Emitter On Voltage

IC=3A ; VCE=4V

 

 

1.8

V

hFE- 1

DC current gain

IC= 1A ; VCE=4V

25

 

 

 

hFE-2

DC current gain

IC=3A ; VCE=4V

10

 

50

 

fT

Transiton frequency

IC=0.5A ; VCE= 10V

3

 

 

MHz

PACKAGE MECHANICAL DATA

TO-252



Product Categories : Semiconductor Plastic Package > Silicon Transistor

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