| Unit Price: | USD 0.018 - 0.021 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
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Basic Info
Model No.: YZPST-MCR100-8
Brand: YZPST
Place Of Origin: China
IT(RMS): 1A
VDRM: 600V
VRRM: 600V
VTM: ≤1.5V
ITSM: 8A
I2t: 0.32A2s
IGM: 0.2A
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 1000000000
Transportation: Ocean,Land,Express,Others
Place of Origin: CHINA
Supply Ability: 1000000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
MAIN FEATURES:
| symbol | value | unit |
| IT(RMS) | 1 | A |
| VDRM/VRRM | 600 | V |
| VTM | ≤1.5 | V |
ABSOLUTE MAXIMUM RATINGS:
| Parameter | Symbol | Value | Unit |
| Storage junction temperature range | Tstg | -40~150 | ℃ |
| Operating junction temperature range | Tj | -40~110 | ℃ |
| Repetitive peak off-state voltage (Tj=25℃) | VDRM | 600 | V |
| Repetitive peak reverse voltage (Tj=25℃) | VRRM | 600 | V |
| RMS on-state current | IT(RMS) | 0.8 | A |
| Non repetitive surge peak on-state current (full cycle, F=50Hz) | ITSM | 8 | A |
| I2t value for fusing (tp=10ms) | I2t | 0.32 | A2s |
| Critical rate of rise of on-state current (IG=2 × IGT) | dI/dt | 50 | A/ μs |
| Peak gate current | IGM | 0.2 | A |
| Average gate power dissipation | PG(AV) | 0.1 | W |
| Peak gate power | PGM | 0.5 | W |
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
|
Symbol |
Test Condition | Value |
Unit | ||
| MIN | TYPE | MAX | |||
| IGT |
VD=12V, RL=33Ω | - | 20 | 200 | µA |
| VGT | - | 0.6 | 0.8 | V | |
|
VGD | VD=VDRM Tj=110℃ RL=3.3kΩ |
0.2 |
- |
- |
V |
| IH | IT=50mA | - | - | 5 | mA |
| IL | IG=1.2IGT | - | - | 6 | mA |
| dV/dt | VD=0.66×VDRM Tj=110℃ G open RGK=1KΩ |
10 |
- |
- | V/ µs |
THERMAL RESISTANCES
| Symbol | Test Condition | Value | Unit | |
| SOT-223 | 31 | |||
| TO-92 | ||||
| (AC) | SOT-23-3L | 75 | ℃/W | |
| Rth(j-c) | SOT-89 | 45 | ||
PACKAGE MECHANICAL DATA
Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)
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