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YANGZHOU POSITIONING TECH CO., LTD.
High dv/dt rate TO-92 0.8A SCR
High dv/dt rate TO-92 0.8A SCR
High dv/dt rate TO-92 0.8A SCR
High dv/dt rate TO-92 0.8A SCR
High dv/dt rate TO-92 0.8A SCR
  • High dv/dt rate TO-92 0.8A SCR
  • High dv/dt rate TO-92 0.8A SCR
  • High dv/dt rate TO-92 0.8A SCR
  • High dv/dt rate TO-92 0.8A SCR
  • High dv/dt rate TO-92 0.8A SCR

High dv/dt rate TO-92 0.8A SCR

    Unit Price: USD 32 - 39 / Others
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-BT169 10-30UA

BrandYZPST

Place Of OriginChina

LT(RMS)0.8A

VTM<1.5V

Tstg-40~150℃

Tj-40~110℃

LTSM10A

L2t0.5A2s

Dl/dt50A/μs

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity100000000

TransportationOcean,Land,Express,Others

Place of OriginCHINA

Supply Ability100000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

YZPST-BT169 SCR


DESCRIPTION:

The B T 1 6 9 ScR series provide high dv/dt rate

with strong resistance to electromagnetic interface.

They are especially recommended for use on residual current circuit breaker, straight hair, igniter etc.

YZPST-BT169 10-30UA TO-92


MAIN FEATURES:

symboI

vaIue

unit

lT(RMS)

0.8

A

VDRM/VRRM

400/600/800

V

VTM

<1.5

V

ABSOLUTE MAXIMUM RATINGS:

Parameter

SymboI

vaIue

Unit

Storage junction temperature range

Tstg

-40~150

operating junction temperature range

Tj

-40~110

Repetitive peak off-state voltage (Tj=25)

VDRM

400/600/800

V

Repetitive peak reverse voltage (Tj=25)

VRRM

400/600/800

V

RMS on-state current (Tc=80)

lT(RMS)

0.8

A

Non repetitive surge peak on-state current

(full cycle, F=50Hz)

lTSM

10

A

l2t value for fusing (tp=10ms)

l2t

0.5

A2s

critical rate of rise of on-state current (lG=2xlGT)

dl/dt

50

A/μs

Peak gate current

lGM

0.2

A

Average gate power dissipation

PG(AV)

0.1

W

Peak gate power

PGM

0.5

W

ELECTRICAL CHARACTERISTICS (Tj=25K  Unless otherwise specified)

SymboI vaIue
Test Condition MlN TYPE MAX unit
lGT - 20 200 μA
VGT VD=12V, RL=33Ω - 0.5 1 V
VD=VDRM Tj=110K
VGD RL=3.3KΩ 0.2 - - V
lH lT=50mA - - 2 mA
lL lG=1.2lGT - - 3 mA
VD=0.66XVDRM   Tj=110K
dV/dt G  RGK=1KΩ 20 - - V/μs

STATIC CHARACTERISTICS

SymboI Test Condition vaIue unit
VTM lTM=2A   tp=380μs Tj=25 MAX 1.5 V
lDRM VDRM= VRRM Tj=25 5 μA
lRRM RGK=1KΩ Tj=110 MAX 100 μA

PACKAGE MECHANICAL DATA

YZPST-BT169 TO-92


Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)

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