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Home > Products > Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR) > High dv/dt rate TO-126 2P6M 2A Sensitive SCR
High dv/dt rate TO-126 2P6M 2A Sensitive SCR
High dv/dt rate TO-126 2P6M 2A Sensitive SCR
High dv/dt rate TO-126 2P6M 2A Sensitive SCR
High dv/dt rate TO-126 2P6M 2A Sensitive SCR
High dv/dt rate TO-126 2P6M 2A Sensitive SCR
  • High dv/dt rate TO-126 2P6M 2A Sensitive SCR
  • High dv/dt rate TO-126 2P6M 2A Sensitive SCR
  • High dv/dt rate TO-126 2P6M 2A Sensitive SCR
  • High dv/dt rate TO-126 2P6M 2A Sensitive SCR
  • High dv/dt rate TO-126 2P6M 2A Sensitive SCR

High dv/dt rate TO-126 2P6M 2A Sensitive SCR

    Unit Price: USD 39 - 45 / Others
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-2P6M 10-30UA

BrandYZPST

Place Of OriginChina

IT(RMS)20A, 2A

IGT≤200μA

VDRM600V

VRRM600V

ITSM20A

I2t2A2s

DI/dt50dI/dt

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity100000000

TransportationOcean,Land,Air

Place of OriginCHINA

Supply Ability100000000

PortSHNAGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

2P6M 2A Sensitive SCRs


DESCRIPTION:

The 2P6M 2A SCR series provide high dv/dt rate

with strong resistance to electromagnetic interface.

They are especially recommended for use on residual current circuit breaker, straight hair, igniter etc.

YZPST-2P6M TO-126

MAIN FEATURES:

symbol

value

unit

IT(RMS)

2.0

A

IGT

≤200

μA

VDRM/VRRM

600

V

ABSOLUTE MAXIMUM RATINGS:

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40~150

Operating junction temperature range

Tj

-40~110

Repetitive peak off-state voltage (Tj=25)

VDRM

600

V

Repetitive peak reverse voltage (Tj=25)

VRRM

600

V

RMS on-state current

IT(RMS)

2

A

Non repetitive surge peak on-state current

(full cycle, F=50Hz)

ITSM

20

A

I2t value for fusing (tp=10ms)

I2t

2

A2s

Critical rate of rise of on-state current (IG=2 × IGT)

dI/dt

50

A/ μs

Peak gate current

IGM

0.2

A

Average gate power dissipation

PG(AV)

0.1

W

Peak gate power

PGM

0.5

W

ELECTRICAL CHARACTERISTICS (Tj=25℃  unless otherwise specified)

Symbol Value
Test Condition MIN TYPE MAX Unit
IGT VD=12V, RL=33Ω - 50 200 μA
VGT - 0.6 0.8 V
VGD VD=VDRM Tj=110 0.2 - - V
IH IT=50mA - - 5 mA
IL IG=1.2IGT - - 6 mA
dV/dt VD=2/3×VDRM   Tj=110 RGK=1KΩ 20 - - V/ µs

THERMAL RESISTANCES

Symbol Test Condition Value Unit
TO-251-4R/TO-252-4R 6.5
TO-92 10
TO-126 7
junction to case(AC) SOT-89-3L 8.3 /W
Rth(j-c) SOT-223-3L 7.3

PACKAGE MECHANICAL DATA

YZPST-2P6M 10-30UA

Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)

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