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Home > Products > Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR) > High voltage capacity TO-247 160A SCR
High voltage capacity TO-247 160A SCR
High voltage capacity TO-247 160A SCR
High voltage capacity TO-247 160A SCR
High voltage capacity TO-247 160A SCR
High voltage capacity TO-247 160A SCR
High voltage capacity TO-247 160A SCR
  • High voltage capacity TO-247 160A SCR
  • High voltage capacity TO-247 160A SCR
  • High voltage capacity TO-247 160A SCR
  • High voltage capacity TO-247 160A SCR
  • High voltage capacity TO-247 160A SCR
  • High voltage capacity TO-247 160A SCR

High voltage capacity TO-247 160A SCR

    Unit Price: USD 0.77 - 1.2 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-CLA100E16

BrandYZPST

Place Of OriginChina

Tstg-40 ~ 150℃

TJ-40~ 125℃

VDRM1200/1600V

VRRM1200/1600V

VDSMVDRM +100V

VRSMVRRM +100V

IT(RMS)160A

ITSM1150A

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity100000000

TransportationOcean,Land,Express

Place of OriginCHINA

Supply Ability100000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

P/N:YZPST-CLA100E16  SCRs
FEATURES
High thermal cycling performance
High voltage capacity
Very high current surge capability lAPPLICATIONS
Line rectifying 50/60 Hz
Softstart AC motor control
DC Motor control
Power converter
AC power control
Lighting and temperature control
YZPST-CLA100E16 TO247

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Storage junction  temperature range

Tstg

-40 ~ 150

Operating junction temperature range

Tj

-40~ 125

Repetitive peak off-state voltage (T =25℃)

VDRM

1200/1600

V

Repetitive peak reverse voltage (T =25℃)

VRRM

1200/1600

V

Non repetitive surge peak Off-state voltage

VDSM

VDRM +100

V

Non repetitive peak reverse voltage

VRSM

VRRM +100

V

RMS on-state current (T = 100℃)

IT(RMS)

160

A

Non repetitive surge peak on-state current

ITSM

1150

A

Average on-state current (180° conduction angle)

IT(AV)

100

A

I2t value for fusing (tp= 10ms)

I2t

6600

A2 S

Critical rate of rise of on-state curren

t(I =2×IGT, tr ≤ 100 ns)

di/dt

150

A/μS

Peak gate current

IGM

5

A

Average gate power dissipation

PG(AV)

1

W

 

ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified)

Symbol

Test Condition

 

Value

Unit

IGT

V = 12V R = 140Ω

MAX.

40

mA

VGT

MAX.

1.5

V

VGD

VD=VDRM Tj=125R=1KΩ

MIN.

0.2

V

IL

IG= 1.2IGT  Tj=25℃

MAX.

250

mA

IH

VD=12V Tj=25℃

MAX.

200

mA

dV/dt

VD=2/3VDRM Gate Open  Tj=125℃

MIN.

1000

V/μs

 

TO-247 Package Mechanical Data

CLA100E16 TO247-3L
 

Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)

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