| Unit Price: | USD 31 - 38 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
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Basic Info
Model No.: YZPST-P035PJE120AT1B
Brand: YZPST
Place Of Origin: China
VCES: 1200V
VGES: ±20V
IC: 35A
CRM: 70A
Ptot: 172W
VcE(sat): 2.15V
VgE(th: 5.6V
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 1000000000
Transportation: Ocean,Land,Express,Air
Place of Origin: CHINA
Supply Ability: 1000000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
IGBT-Inverter
Maximum Rated Values
| Symbo | Description | Conditions | Values | Unit |
| VCES | Collector-Emitter Voltage | Ty=25℃ | 1200 | V |
| VGEs | Gate-Emitter Peak Voltage | Ty=25℃ | ±20 | V |
| Ic | Continuous DC Collector Current | Tc=100℃ | 35 | A |
| CRM | Repetitive Peak Collector Current | tp=1ms | 70 | A |
| Ptot | Total Power Dissipation | Tc=25℃,Tyimax=175℃ | 172 | W |
Characteristic Values
|
Symbo |
Description |
Conditions | Values |
Unit | ||
| Min | Typ. | Max. | ||||
| VcE(sat) | Collector-Emitter Saturation Voltage | VGE=15V,Ic=35A,Ty=25℃ |
| 2.15 |
| V |
| VGE=15V,Ic=35A,Tv=125℃ |
| 2.57 |
| V | ||
| VgE(th | Gate Threshold Voltage | VGE=VcE,c=1.2mA |
| 5.6 |
| V |
| CES | Collector-Emitter Cut-Off Current | VcE=1200V,VGE=0V |
|
| 1 | mA |
| GES | Gate-Emitter Leakage Current | VGE=20V,VcE=0V |
|
| 100 | nA |
| Cies | Input Capacitance |
VcE=25V,VGE=OV,f=1MHz |
| 2590 |
| pF |
| Coes | Output Capacitance |
| 180 |
| pF | |
| Cres | Reverse Transfer Capacitance |
| 86 |
| pF | |
| td(on) | Turn-on Delay Time |
VcE=600V VGF=±15V Ic=35A Rg=120 Inductive Load Ty=25℃ |
| 34 |
| ns |
| t | Turn-on Rise Time |
| 20 |
| ns | |
| td(off) | Turn-off Delay Time |
| 230 |
| ns | |
| t | Turn-off Fall Time |
| 160 |
| ns | |
| Eon | Turn-on Switching Loss |
| 2.5 |
| mJ | |
| Eoff | Turn-off Switching Loss |
| 2.5 |
| mJ | |
| lsc | Short Circuit Data | VGE≤15V,Vcc=800V tp≤10μs,Tv=150℃ |
| 151 |
| A |
| RthJC | Thermal Resistance,Junction to Case | Per IGBT |
|
| 0.87 | K/W |
| Tw OF | Virtual JunctionTemperature | Under Switching | -40 |
| 150 | ℃ |
Product Categories : Semiconductor Module Devices > IGBT Module
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