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Home > Products > Semiconductor Plastic Package > Silicon Transistor > High speed switching 600V 15A IGBT TO-220F
High speed switching 600V 15A IGBT TO-220F
High speed switching 600V 15A IGBT TO-220F
High speed switching 600V 15A IGBT TO-220F
  • High speed switching 600V 15A IGBT TO-220F
  • High speed switching 600V 15A IGBT TO-220F
  • High speed switching 600V 15A IGBT TO-220F

High speed switching 600V 15A IGBT TO-220F

    Unit Price: USD 0.48 - 0.68 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-G15T60FS

BrandYZPST

Place Of OriginChina

Product NameHigh Speed Switching 600v 15a Igbt To-220f

VCES600v

VGES±20v

IC14a

ICM45a

IF8a

IFM45a

TJ-55 To +150℃

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity100

TransportationOcean,Air

Place of OriginChina

Supply Ability500

CertificateISO9001-2015,ROHS

HS Code85413000

PortShanghai

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description


Features

 600V,15A

VCE(sat)(typ.)=1.8V@VGE=15V,IC=15A

High speed switching

Higher system efficiency

Soft current turn-off waveforms

Square RBSOA

General Description

YZPST trench IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switching applications.

YZPST-G15T60FS-1.jpg

 

Absolute Maximum Ratings

Symbol

Parameter

Value

Units

VCES

Collector-Emitter Voltage

600

V

VGES

Gate-Emitter Voltage

+ 20

V

 

IC

Continuous Collector Current ( TC=25 )

14

A

Continuous Collector Current ( TC=100)

8

A

ICM

Pulsed Collector Current (Note 1)

45

A

IF

Diode Continuous Forward Current ( TC=100 )

8

A

IFM

Diode Maximum Forward Current (Note 1)

45

A

tsc

Short Circuit Withstand Time

10

us

 

PD

Maximum Power Dissipation ( TC=25 )

28

W

Maximum Power Dissipation ( TC=100)

11

W

TJ

Operating Junction Temperature Range

-55 to +150

TSTG

Storage Temperature Range

-55 to +150

 

 

Thermal Characteristics

Symbol

Parameter

Max.

Units

Rth j-c

Thermal Resistance, Junction to case for IGBT

4.4

/ W

Rth j-c

Thermal Resistance, Junction to case for Diode

5.2

/ W

Rth j-a

Thermal Resistance, Junction to Ambient

65

/ W

 

Mechanical Dimensions
YZPST-G15T60FS-2.jpgYZPST-G15T60FS-3.jpg








Product Categories : Semiconductor Plastic Package > Silicon Transistor

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