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Home > Products > Semiconductor Plastic Package > Silicon Transistor > High voltage TO-92 Plastic-Encapsulate Transistor NPN BC556 BC557 BC558
High voltage TO-92 Plastic-Encapsulate Transistor NPN BC556 BC557 BC558
High voltage TO-92 Plastic-Encapsulate Transistor NPN BC556 BC557 BC558
High voltage TO-92 Plastic-Encapsulate Transistor NPN BC556 BC557 BC558
High voltage TO-92 Plastic-Encapsulate Transistor NPN BC556 BC557 BC558
  • High voltage TO-92 Plastic-Encapsulate Transistor NPN BC556 BC557 BC558
  • High voltage TO-92 Plastic-Encapsulate Transistor NPN BC556 BC557 BC558
  • High voltage TO-92 Plastic-Encapsulate Transistor NPN BC556 BC557 BC558
  • High voltage TO-92 Plastic-Encapsulate Transistor NPN BC556 BC557 BC558

High voltage TO-92 Plastic-Encapsulate Transistor NPN BC556 BC557 BC558

    Unit Price: USD 7.2 - 8.8 / Others
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-BC547

Place Of OriginChina

Collector-Base Voltage50V

Collector-Emitter Voltage45V

Emitter-Base Voltage6V

Collector Current-Continuous0.1A

Collector Power Dissipation625mW

TJ,Tstg:-55~+150℃

Additional Info

TransportationOcean,Land

Supply Ability10000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

TO-92 Plastic-Encapsulate Transistors
YZPST-BC546 / BC547 / BC548   TRANSISTOR (NPN)
FEATURES
 High Voltage
 Complement to BC556,BC557,BC558
YZPST-BC547 TO92


ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
BC546 TO-92 Bulk 1000pcs/Bag
BC546-TA TO-92 Tape 2000pcs/Box
BC547 TO-92 Bulk 1000pcs/Bag
BC547-TA TO-92 Tape 2000pcs/Box
BC548 TO-92 Bulk 1000pcs/Bag
BC548-TA TO-92 Tape 2000pcs/Box

MAXIMUM RATINGS (Ta=25τ unless otherwise noted)

Symbol Parameter Value Unit
BC546 80
V CBO Collector-Base Voltage BC547 50 V
BC548 30
BC546 65
V CEO Collector-Emitter Voltage BC547 45 V
BC548 30
BC546 6 V
V EBO Emitter-Base Voltage BC547 6 V
BC548 5 V
IC Collector Current-Continuous 0.1 A
P C Collector Power Dissipation 625 mW
R θ JA Thermal Resistance from Junction to Ambient 200 τ /W
TJ,Tstg Operation Junction  and Storage Temperature Range -55~+150 τ

Ta =25 τ unless otherwise specified

ELECTRICAL CHARACTERISTICS     =25τ unless otherwise                     

Parameter Symbol Test     conditions Min Typ Max Unit
BC546 80
Collector-base breakdown voltage BC547 V(BR)CBO IC= 0.1mA,IE=0 50 V
BC548 30
BC546 65
Collector-emitter breakdown voltage BC547 V(BR)CEO IC=1mA,IB=0 45 V
BC548 30
BC546 6
Emitter-base breakdown voltage BC547 V(BR)EBO IE=10μA,IC=0 6 V
BC548 5
BC546 VCB=70V,IE=0 0.1 μA
Collector cut-off current BC547 ICBO VCB=50V,IE=0 0.1 μA
BC548 VCB=30V,IE=0 0.1 μA
BC546 VCE=60V,IB=0 0.1 μA
Collector cut-off current BC547 ICEO VCE=45V,IB=0 0.1 μA
BC548 VCE=30V,IB=0 0.1 μA
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA
DC current gain * VCE=5V, IC=2mA 110 800
hFE
Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=5mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC=100mA,IB=5mA 1.1 V
Base-emitter voltage VBE VCE=5V, IC=2mA 0.58 0.7 V
VCE=5V, IC=10mA 0.75 V
Collector output capacitance Cob VCB=10V,IE=0, f=1MHz 4.5 pF
Transition frequency fT VCE=5V,IC=10mA, f=100MHz 150 MH

TO-92 Package Outline Dimensions

Outline Dimensions


Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 3.3 3.7 0.13 0.146
A1 1.1 1.4 0.043 0.055
b 0.38 0.55 0.015 0.022
c 0.36 0.51 0.014 0.02
D 4.3 4.7 0.169 0.185
D1 3.43 0.135
E 4.3 4.7 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.44 2.64 0.096 0.104
L 14.1 14.5 0.555 0.571
1.6 0.063
h 0 0.38 0 0.015

Product Categories : Semiconductor Plastic Package > Silicon Transistor

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