| Unit Price: | USD 0.55 - 0.72 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
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Basic Info
Model No.: YZPST-FW26025A
Brand: YZPST
Type: Intrinsic Semiconductor
Application: Radio
Batch Number: 2010+
VCBO: -100V
VCEO: -100V
VEBO: -5V
IC: -20A
Icm: -40A
IB: -0.5A
PC: 160W
TJ: 200℃
Tstg: -65~200℃
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 100000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 1000000
Certificate: ISO9001-2015,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
Silicon PNP Darlington Power Transistor
YZPST-FW26025A
Silicon PNP Darlington Power Transistor
DESCRIPTION
·High DC Current Gain-
: hFE = 5000(Min)@ IC= -2A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -100V(Min)
·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS
·Designed for linear and switching industrial equipment
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
|
SYMBOL |
PARAMETER |
VALUE |
UNIT |
|
VCBO |
Collector-Base Voltage |
-100 |
V |
|
VCEO |
Collector-Emitter Voltage |
-100 |
V |
|
VEBO |
Emitter-Base Voltage |
-5 |
V |
|
IC |
Collector Current-Continuous |
-20 |
A |
|
ICM |
Collector Current-Peak |
-40 |
A |
|
IB |
Base Current- Continuous |
-0.5 |
A |
|
PC | Collector Power Dissipation @TC=25℃ |
160 |
W |
|
Tj |
Junction Temperature |
200 | ℃ |
|
Tstg |
Storage Temperature Range |
-65~200 | ℃ |
THERMAL CHARACTERISTICS
|
SYMBOL |
PARAMETER |
MAX |
UNIT |
|
Rth j-c |
Thermal Resistance, Junction to Case |
1.09 | ℃/W |
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN |
TYP. |
MAX |
UNIT |
|
VCEO(SUS)* |
Collector-Emitter Sustaining Voltage |
IC= -100mA, IB= 0 |
-100 |
|
|
V |
|
VCE(sat)-1* |
Collector-Emitter Saturation Voltage |
IC= -10A ,IB= -40mA |
|
|
-2.0 |
V |
|
VCE(sat)-2* |
Collector-Emitter Saturation Voltage |
IC= -20A ,IB= -200mA |
|
|
-3.0 |
V |
|
VBE(sat)* |
Base-Emitter Saturation Voltage |
IC= -20A ,IB= -200mA |
|
|
-4 |
V |
|
V BE(on)* |
Base-Emitter On Voltage |
IC= -10A ; VCE= -3V |
|
|
-2.8 |
V |
|
ICEO |
Collector Cutoff current |
VCE= -50V, IB= 0 |
|
|
-1 |
mA |
|
ICEV |
Collector Cutoff current(VBE=-1.5V) | VCE= -100V, IB= 0 |
|
| -0.5 |
mA |
| VCE= -100V, IB= 0,Tc=150℃ | -5 | |||||
|
IEBO |
Emitter Cutoff Current |
VEB= -5V; IC= 0 |
|
|
-2 |
mA |
|
hFE-1* |
DC Current Gain |
IC= -2A ; VCE= -3V |
5000 |
|
|
|
|
hFE-2* |
DC Current Gain |
IC= -10A ; VCE= -3V |
750 |
|
18000 |
|
|
hFE-3* |
DC Current Gain |
IC= -30A ; VCE= -3V |
200 |
|
|
|
*:Pulse test:Pulse width=300us,duty cycle≤2%
Product Categories : Semiconductor Plastic Package > Silicon Transistor
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