| Unit Price: | USD 0.35 - 0.45 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
Download:
Basic Info
Model No.: YZPST-7N90A0
Brand: YZPST
Place Of Origin: China
V DSS: 900V
ID: 7A
PD (TC =25℃): 160W
RDS(ON)TYP: 1.4Ω
A1 IDM: 28A
VGS: ±30V
A2 EAS: 700mJ
A1 EAR: 60mJ
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 1000000000
Transportation: Ocean,Land,Express,Others
Place of Origin: CHINA
Supply Ability: 1000000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
100% Single Pulse avalanche energy Test
| Symbol | Parameter | Rating | Units |
| V DSS | Drain-to- Source Voltage | 900 | V |
| ID | Continuous Drain Current | 7 | A |
| Continuous Drain Current TC = 100 °C | 5 | A | |
| a1 | Pulsed Drain Current | 28 | A |
| IDM | |||
| VGS | Gate-to-Source Voltage | ±30 | V |
| a2 | Single Pulse Avalanche Energy | 700 | mJ |
| EAS | |||
| a1 | Avalanche Energy , Repetitive | 60 | mJ |
| EAR | |||
| a1 | Avalanche Current | 2.4 | A |
| IAR | |||
| dv/dt | Peak Diode Recovery dv/dt | 5 | V/ns |
| a3 | |||
| PD | Power Dissipation | 160 | W |
| Derating Factor above 25 °C | 1.28 | W/℃ | |
| TJ ，Tstg | Operating Junction and Storage | 150 ，– 55 to 150 | ℃ |
| Temperature Range | |||
| TL | MaximumTemperature for Soldering | 300 | ℃ |
Electrical Characteristics（Tc= 25℃ unless otherwise specified ）：
| OFF Characteristics | ||||||
| Symbol | Parameter | Test Conditions | Rating | Units | ||
| Min. | Typ. | Max. | ||||
| V DSS | Drain to Source Breakdown | VGS =0V, I D =250µA | 900 | -- | -- | V |
| Voltage | ||||||
| ΔBVDSS/ ΔTJ | Bvdss Temperature Coefficient | ID=250uA, Reference25℃ | -- | 0.8 | -- | V/℃ |
| VDS = 900V, VGS = 0V, | -- | -- | 1 | |||
| IDSS | Drain to Source Leakage Current | Ta = 25℃ | µ A | |||
| VDS =720V, VGS = 0V, | -- | -- | 250 | |||
| Ta = 125℃ | ||||||
| IGSS( F) | Gate to Source Forward Leakage | VGS = +30V | -- | -- | 10 | µ A |
| IGSS(R ) | Gate to Source Reverse Leakage | VGS =- 30V | -- | -- | -10 | µ A |
| ON Characteristics | ||||||
| Symbol | Parameter | Test Conditions | Rating | Units | ||
| Min. | Typ. | Max. | ||||
| RDS(ON) | Drain-to-Source On- Resistance | VGS =10V, I D =3.0A | -- | 1.4 | 1.8 | Ω |
| VGS(TH ) | Gate Threshold Voltage | VDS = VGS, I D = 250µA | 2.5 | -- | 4.5 | V |
| Pulse width tp ≤380µs,δ≤2% | ||||||
| Dynamic Characteristics | ||||||
| Symbol | Parameter | Test Conditions | Rating | Units | ||
| Min. | Typ. | Max. | ||||
| gfs | Forward Transconductance | VDS = 15V, I D =3A | -- | 8 | -- | S |
| Ciss | Input Capacitance | -- | 1460 | -- | ||
| Coss | Output Capacitance | VGS = 0V VDS = 25V | -- | 130 | -- | pF |
| Crss | Reverse Transfer Capacitance | f = 1.0MHz | -- | 23 | -- | |
| Resistive Switching Characteristics | ||||||
| Symbol | Parameter | Test Conditions | Rating | Units | ||
| Min. | Typ. | Max. | ||||
| td(ON) | Turn-on Delay Time | -- | 22 | -- | ||
| tr | Rise Time | I D =7.0A V DD = 450V | -- | 45 | -- | |
| td(OFF ) | Turn-Off Delay Time | VGS = 10V RG = 9.1Ω | -- | 33 | -- | ns |
| tf | Fall Time | -- | 37 | -- | ||
| Qg | Total Gate Charge | -- | 37 | -- | ||
| Qgs | Gate to Source Charge | I D =7 . 0A V DD =450V | -- | 8 | -- | nC |
| Qgd | Gate to Drain (“ Miller ”)Charge | VGS = 10V | -- | 14 | -- | |
Product Categories : Semiconductor Plastic Package > Silicon Transistor
Hot Products
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Contact Now
