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Home > Products > Semiconductor Disc Devices(Capsule Type) > Fast Recovery Diode > High surge capacity TO-263 Fast Recovery Diode MUR1620CTR
High surge capacity TO-263 Fast Recovery Diode MUR1620CTR
High surge capacity TO-263 Fast Recovery Diode MUR1620CTR
High surge capacity TO-263 Fast Recovery Diode MUR1620CTR
High surge capacity TO-263 Fast Recovery Diode MUR1620CTR
  • High surge capacity TO-263 Fast Recovery Diode MUR1620CTR
  • High surge capacity TO-263 Fast Recovery Diode MUR1620CTR
  • High surge capacity TO-263 Fast Recovery Diode MUR1620CTR
  • High surge capacity TO-263 Fast Recovery Diode MUR1620CTR

High surge capacity TO-263 Fast Recovery Diode MUR1620CTR

    Unit Price: USD 0.14 - 0.17 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-RU50 KAK U1620G

Place Of OriginChina

VRRM200V

VRW M140V

VR(DC)200V

IF(AV)8A

IFM16A

IFSM180A

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity1000000

TransportationOcean,Land,Air

Supply Ability1000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

 Fast Recovery Diode YZPST-RU50 KAK U1620G

High surge capacity TO-263 Fast Recovery Diode MUR1620CTR

MUR1610CTR-MUR1660CTR

Features:
 High surge capacity
 Low Forward Voltage Drop.
 High Current Capability .
 Super Fast Switching Speed For High Efficiency
Fast Recovery Diode To 263


Absolute Maximum Ratings    (Ta=25C unless otherwise noted)

Parameter

Symbol

MUR 1610 CTR

MUR 1615 CTR

MUR 1620 CTR

MUR 1640 CTR

MUR 1660 CTR

Unit

Peak Repetitive Reverse Voltage

VRRM

100

150

200

400

600

V

Working Peak Reverse Voltage

VRW M

70

105

140

280

420

V

DC Blocking Voltage

VR(DC)

100

150

200

400

600

V

Average Rectified Forward Current

Per Leg      Total Device

IF(AV)

8

16

A

Peak Rectified Forward Current Per Diode Leg (Rated VR, Square Wave, 20 kHz)

IFM

16

A

Nonrepetitive Peak Surge Current(Surge applied at rated load conditions half wave, single phase, 60 Hz)

IFSM

180

1.Cathode 2.Anode 3. Cathode

A

Operating Junction Temperature and Storage Temperature

TJ, Tstg

-55 to +150

C

Maximum Thermal Resistance, JunctiontoCase(Per Leg)

R θJC

3.0

2.0

C/

W

ELECTRICAL CHARACTERISTICS (Per Diode Leg)

Parameter

Symbol

MUR 1610 CTR

MUR 1615 CTR

MUR 1620 CTR

MUR 1640 CTR

MUR 1660 CTR

Unit

Forward Voltage (Note 1)(IF = 8.0 A, TC = 25°C)

VF

1.0

1.3

1.7

V

Maximum Instantaneous Reverse Current (Note 1)

(Rated DC Voltage, TC = 125°C)

(Rated DC Voltage, TC = 25°C)

IR

250

10

500

10

μ A

Maximum Reverse Recovery Time

(IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A)

TRR

35

35

ns



Product Categories : Semiconductor Disc Devices(Capsule Type) > Fast Recovery Diode

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