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Home > Products > Semiconductor Disc Devices(Capsule Type) > Fast Recovery Diode > High Current Capability Fast Recovery Diode TO-263 MUR1620CT
High Current Capability Fast Recovery Diode TO-263 MUR1620CT
High Current Capability Fast Recovery Diode TO-263 MUR1620CT
High Current Capability Fast Recovery Diode TO-263 MUR1620CT
High Current Capability Fast Recovery Diode TO-263 MUR1620CT
  • High Current Capability Fast Recovery Diode TO-263 MUR1620CT
  • High Current Capability Fast Recovery Diode TO-263 MUR1620CT
  • High Current Capability Fast Recovery Diode TO-263 MUR1620CT
  • High Current Capability Fast Recovery Diode TO-263 MUR1620CT

High Current Capability Fast Recovery Diode TO-263 MUR1620CT

    Unit Price: USD 0.14 - 0.17 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-RU50 AKA U1620G

BrandYZPST

Place Of OriginChina

VRRM200V

VRW M140V

VR(DC)200V

IF(AV)8A

IFM16A

IFSM180A

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity10000000

TransportationOcean,Air

Supply Ability10000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

Fast Recovery Diode YZPST-RU50 AKA U1620G

High Current Capability Fast Recovery Diode TO-263 MUR1620CT

Features:
High surge capacity
Low Forward Voltage Drop.
High Current Capability
Super Fast Switching Speed For High Efficiency

Absolute Maximum Ratings    (Ta=25C unless otherwise noted)

Parameter

Symbol

MUR 1610 CT

MUR 1615 CT

MUR 1620 CT

MUR 1640 CT

MUR 1660 CT

Unit

Peak Repetitive Reverse Voltage

VRRM

100

150

200

400

600

V

Working Peak Reverse Voltage

VRW M

70

105

140

280

420

V

DC Blocking Voltage

VR(DC)

100

150

200

400

600

V

Average Rectified Forward Current Per Leg

Total Device                                                            Total Device

IF(AV)

8

16

A

Peak Rectified Forward Current Per Diode Leg

IFM

16

A

Nonrepetitive Peak Surge Current(Surge applied at rated load conditions half wave, single phase, 60 Hz)

IFSM

180

A

Operating Junction Temperature and Storage Temperature

TJ, Tstg

1.Anode   2.Cathode    3. Anode -55 to +150

C

Maximum Thermal Resistance, JunctiontoCase(Per Leg)

R θJC

3.0

2.0

C/

W

ELECTRICAL CHARACTERISTICS (Per Diode Leg)

Parameter

Symbol

MUR 1610 CT

MUR 1615 CT

MUR 1620 CT

MUR 1640 CT

MUR 1660 CT

Unit

Forward Voltage (Note 1)(IF = 8.0 A, TC = 25°C)

VF

1.0

1.3

1.7

V

Maximum Instantaneous Reverse Current (Note 1)

(Rated DC Voltage, TC = 150°C)

(Rated DC Voltage, TC = 25°C)

IR

250

10

500

10

μ A

Maximum Reverse Recovery Time

(IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A)

TRR

35

35

ns

Fast Recovery Diode TO-263

Product Categories : Semiconductor Disc Devices(Capsule Type) > Fast Recovery Diode

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