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Home > Products > Semiconductor Disc Devices(Capsule Type) > Fast Recovery Diode > High Surge rating high power fast rectifier diode
High Surge rating high power fast rectifier diode
High Surge rating high power fast rectifier diode
High Surge rating high power fast rectifier diode
High Surge rating high power fast rectifier diode
  • High Surge rating high power fast rectifier diode
  • High Surge rating high power fast rectifier diode
  • High Surge rating high power fast rectifier diode
  • High Surge rating high power fast rectifier diode

High Surge rating high power fast rectifier diode

    Unit Price: USD 145 - 185 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF
    Min. Order: 1 Piece/Pieces

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Basic Info

Model No.YZPST-M2639ZC450

BrandYZPST

Manufacturing TechnologyDiscrete Device

MaterialCompound Semiconductor

VRRM4500V

IRRM20 MA 150 MA

IF(AV)M2639A

IFRMS4922A

IFSM27.5kA

I2t3.79x103kA2s

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity100

TransportationOcean,Air

Place of OriginCHINA

Supply Ability5000

CertificateISO9001-2015,ROHS

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

FAST Rectifier

YZPST-M2639ZC450

 High Surge rating high power fast Rectifier Diode

Fast Recovery Diode

GENERAL PURPOSE HIGH POWER FAST RECTIFIER

Features:

. All Diffused Structure

. High Surge rating                

. Soft Reverse Recovery

. Rugged Ceramic Hermetic Package

. Pressure Assembled Device

Typical Applications:

. Rectifier for Drives Applications

. Medium voltage converters

. Pulsed power applications

. Crowbar Applications

ELECTRICAL CHARACTERISTICS AND RATINGS

Reverse Blocking

VRRM (1)

VRSM (1)

4500

4500

VRRM = Repetitive peak reverse voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage

IRRM

20 mA

150 mA 

Conducting - on state    

Parameter

Symbol

Min

Max.

Typ

Units

Conditions

Max. Average value of on-state current

IF(AV)M

 

2639

 

A

Sinewave,180oconduction,Tc=55oC

RMS value of on-state current

IFRMS

 

4922

 

A

Nominal value

Peak one cycle surge

(non repetitive) current

IFSM

 

27.5

 

kA

Tj=150°C, VR=0,8VRRM, tp=10ms

I square t

I2t

 

3.79x103

 

kA2s

10 msec

Peak on-state voltage

VFM

 

2.25

 

V

IFM =3000 A; Tj = 150 oC

Threshold  voltage

VFO

 

1.38

 

 

Tj = 150 oC

Forward slope resistance

rF

 

0.29

 

mΩ

Tj = 150 oC

Reverse Recovery Current (4)

IRM(REC)

 

-

280

A

IFM = 1000 A; dIF/dt = 60 A/ms,

Tj = 150 oC

Reverse Recovery Charge (4)

Qrr

 

-

2300

mC

 

Reverse Recovery Time (4)

tRR

 

-

8.5

ms

THERMAL AND MECHANICAL CHARACTERISTICS  

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+150

 

oC

 

Storage temperature

Tstg

-40

+150

 

oC

 

Thermal resistance - junction to case

RQ (j-c)

 

0.011

 

 

K/W

Double sided cooled

Single sided cooled

Thermal resistance - case to sink

RQ (c-s)

 

0,.022

 

 

K/W

Double sided cooled

Single sided cooled

Mounting force

P

37

47

-

kN

 

Weight

W

 

 

1700

g

About

CASE OUTLINE AND DIMENSIONS

YZPST-M2639ZC450-1



Sym

A

B

C

D

H

mm

109

73

98

3.5×3

36±1




Product Categories : Semiconductor Disc Devices(Capsule Type) > Fast Recovery Diode

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