| Unit Price: | USD 6.2 - 8.2 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
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Basic Info
Model No.: YZPST-ESB150NH40SN
Brand: YZPST
Place Of Origin: China
IF(AV)M: 150A
IFSM: 2100A
I2t: 1830kA2S
Tj: -40 ~ + 175℃
Tstg: -40 ~ + 150℃
IRRM: 1mA
VFM: 1.4V
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 100000000
Transportation: Ocean,Land,Others
Place of Origin: CHINA
Supply Ability: 100000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
Silicon Super Fast Recovery Diode Module
TYPE:YZPST-ESB150NH40SN
Features · High Surge Capability · Types from 50 V to 600 V VRRM · Not ESD Sensitive Symbol Condition Ratings Unit IF(AV)M TC=100°C; 180° sine 150 A IFRMS maximum value for continuous operation A IFSM Tj=25°C; t = 8.3 ms (50 Hz); sine 2100 A I2t Tj=25°C; t = 8.3 ms (50 Hz); sine 1830 kA2S Viso A.C.1minute/1second - V Tj -40 ~ + 175 °C Tstg -40 ~ + 150 °C M mounting torque; ±15% 4 Nm terminal torque; ±15% 3 Nm W approx. 95 g IRRM AtVRRM，Single phase，half wave，Tj=100°C 1 mA VFM On-State Current 150A，Tj=25°C 1.40 V VF0 Tj=150°C - V rF Tj=150°C - mΩ trr Tj=25°C; IF = 150A; -diF/dt =300A/μs; VR = 200V; 120 ns Qrr Tj=150°C; IF = 50A; -diF/dt = 100A/μs; VR = 100V - us IRM - A Rth(j-c) Per Module 0.12 °C/W Rth(c-h) Per Module - °C/W Outline Drawing 
Product Categories : Semiconductor Module Devices > Diode Module
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