| Unit Price: | USD 18 - 25 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
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Basic Info
Model No.: YZPST-MFC200-16
Brand: YZPST
Place Of Origin: China
VRRM: 1600V
VDRM: 1600V
VRSM: 1700V
IRRM, IDRM: 70 mA
Dv/dt: 1000 V/µs
ITAV, IFAV: 216A
ITRMS, IFRMS: 340A
ITSM, IFSM: 6.8kA
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 1000000
Transportation: Ocean,Land
Supply Ability: 100000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
Reverse blocking - Off-state
| Device Type | VRRM (1) | VDRM (1) | VRSM (1) |
| YZPST MFC200 | 1600 V | 1600 V | 1700 V |
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off-state voltage
VRSM = Non repetitive peak reverse voltage (2)
| Repetitive reverse and off-state peak leakage current | IRRM, IDRM | 70 mA (3) |
| Critical rate of rise of off-state voltage | dv/dt | 1000 V/µs (4) |
| Parameter | Symbol | Min | Max | Typ | Unit | Conditions | |
| Average on-state / forward current | ITAV, IFAV | 216 | A | 50 Hz sine wave,180o conduction, | |||
| Tc = 85 °C | |||||||
| RMS on-state / forward current | ITRMS, IFRMS | 340 | A | 50 Hz sine wave,180° conduction, | |||
| Tc = 85 °C | |||||||
| Surge non repetitive current | ITSM, IFSM | 6.8 | kA | 50 Hz sine wave | |||
| Half cycle | |||||||
| I squared t | I2 t | 231 | kA2s | VR = 0 | |||
| Tj = Tjmax | |||||||
| Peak on-state / forward voltage | VTM, VFM | 1.1 | V | On-state current 200 A, Tj = Tjmax | |||
| Threshold voltage | VT(TO) | 0.8 | V | Tj = Tjmax | |||
| On-state slope resistance | rT | 1.4 | mΩ | Tj = Tjmax | |||
| Holding current | IH | 150 | mA | Tj = 25 °C | |||
| Latching current | IL | 200 | mA | Tj = 25 °C | |||
| Critical rate of rise of on-state current | di/dt | 500 | A/µs | IG = 5 IGT, tr= 1 µs, Tj = Tjmax, non rep. | |||
| RMS isolation voltage | VINS | 3000 | V | AC 50 Hz, 60 s | |||
| Parameter | Symbol | Min | Max | Typ | Unit | Conditions | |
| Gate current | IGT | 150 | mA | VD = 6 V; RL = 6 Ω; Tj = 25 °C | |||
| Gate voltage | VGT | 2 | V | VD = 6 V; RL = 6 Ω; Tj = 25 °C | |||
OUTLINE AND DIMENSIONS
Product Categories : Semiconductor Module Devices > Diode Module
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