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YANGZHOU POSITIONING TECH CO., LTD.
Home > Products > Semiconductor Module Devices > Diode Module > High efficiency 45V MK4045 schottky bypass diode module
High efficiency 45V MK4045 schottky bypass diode module
High efficiency 45V MK4045 schottky bypass diode module
High efficiency 45V MK4045 schottky bypass diode module
High efficiency 45V MK4045 schottky bypass diode module
  • High efficiency 45V MK4045 schottky bypass diode module
  • High efficiency 45V MK4045 schottky bypass diode module
  • High efficiency 45V MK4045 schottky bypass diode module
  • High efficiency 45V MK4045 schottky bypass diode module

High efficiency 45V MK4045 schottky bypass diode module

    Unit Price: USD 0.27 - 0.3 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-MK4045

BrandYZPST

Place Of OriginChina

VRRM45V

VRMS31.5V

VDC45V

I(AV)40A

IFSM400A

TOP-55~+150℃

TJ≤ 200℃

Tstg-55~+150℃

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000000

TransportationOcean,Land,Express,Others

Supply Ability1000000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

Bypass Diode Module For PV


P/N: YZPST-MK4045
FEATURES
Metal of silicon rectifier, majority carrier conduction
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low IR
High surge capacity
High temperature reverse characteristic is excellent For use in photovoltaic solar cell protection
MECHANICAL DATA
Case: Molded plastic, MT09E
Epoxy: UL 94V-O rate flame retardant
Polarity: As marked
Mounting position: Any
Marking: MK4045      
YZPST-MK4045



Maximum Ratings and Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60HZ, resistive or inductive load.
For capacitive load, derate current by 20%.


Symbols

40MT045

Units

Maximum Recurrent Peak Reverse Voltage

VRRM

45

V

Maximum RMS Voltage

VRMS

31.5

V

Maximum DC Blocking Voltage

VDC

45

V

Maximum Average Forward Rectified Current at TC = 125°C

I(AV)

40

A

Peak Forward Surge Current,

 

 

 

8.3ms single half-sine-wave

IFSM

400

A

superimposed on rated load (JEDEC method)

 

 

 

Maximum Forward

at IF  = 30A, TC  = 25°C

VF

0.55

 

 

at IF  = 40A, TC  = 25°C

0.59

V

Voltage (Note 1)

at IF  = 40A, TC  =125°C

0.47

 

Maximum Reverse Current

at TJ=25

IR

0.5

mA

at Rated DC Blocking Voltage

TJ=100

500

Typical Thermal Resistance

RθJC

1.2

/W

Operating Junction Temperature Range

TOP

-55 to +150

Junction Temperature in DC Forward Current Without Reverse Bias. T 1 hour (Note 3)

TJ

200

Storage Temperature Range

Tstg

-55 to +150

NOTES:

1- 300us Pulse Width, 2%Duty Cycle.

2- Thermal Resistance Junction to Case. Without Heatsink.

3- Meets The Requiements Of IEC 61215 ed. 2 Bypass Diode Thermal Test.

Product Categories : Semiconductor Module Devices > Diode Module

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