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YANGZHOU POSITIONING TECH CO., LTD.

Company Details

YANGZHOU POSITIONING TECH CO., LTD.

[Jiangsu,China]

Business Type:Trade Company , Distributor/Wholesaler , Manufacturer , Service

Main Markets: Africa , Americas , Asia , Europe , Worldwide

Exporter:91% - 100%

Certs:ISO9001, REACH, RoHS, Test Report, UL

Description:TO-220F BTA216X-600B Triac,Good Performance at Dv Dt and Reliability,BTA216X-600B Triac

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Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > TO-220F BTA216X-600B Triac have good performance at dv/dt and reliability

TO-220F BTA216X-600B Triac have good performance at dv/dt and reliability

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TO-220F BTA216X-600B Triac have good performance at dv/dt and reliability

Unit Price:

USD 0.13 - 0.16 / Piece/Pieces

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

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Basic Info

Model No.: YZPST-BTA216X-600B

Brand: YZPST

Place Of Origin: China

IT(RMS): 16A

VDRM: 600V

VRRM: 600V

I2t: 98A2S

Di/dt: 100A/μs

IGM: 2A

VGM: 5W

PGM: 5W

Additional Info

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 1000000000

Transportation: Ocean,Land,Express,Others

Place of Origin: CHINA

Supply Ability: 1000000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Product Description

BTA216X-600B TRIACS

DESRCRIPTION:

Due to separation glass passivation, these devices have good

performance at dv/dt and reliability. The Triac series is suitable for

general purpose AC switching. They can be used as an On-Off

function in the applications such as static relays, heating regulation,

or for phase control operation in light dimmers, motor speed

controllers.

YZPST-BTA216X-600B

MAIN FEATURES

Symbol	Value	Unit
IT(RMS)	16	A
VDRM/VRRM	600	V
IGT	≤10	mA

ABSOLUTE MAX I MUM RATINGS

Symbol	PARAMETER		Value	Unit
IT(RMS)	RMS on-state current(full sine wave)	TO-220.Non-Ins TC≤99℃	16	A
	Non repetitive surge peak on-state current	t=20ms	140
ITSM	(full sine wave, Tj=25℃)	t= 16.7ms	150	A
I2t	I2t Value for fusing	t= 10ms	98	A2S
di/dt	Repetitive rate of rise of on-state Current after triggering	ITM = 20 A; IG = 0.2 A dIG/dt = 0.2 A/us	100	A/μs
IGM	Peak gate current,	—	2	A
VGM	Peak gate voltage	—	5	W
PGM	Peak gate power	—	5	W
PG(AV)	Average gate power	over any 20 ms period	0.5	W
Tstg	Storage junction temperature range	-40 to +150		℃
Tj	Operating junction temperature range	125		℃

ELECTRICAL CHARACTERISTICS (Tj = 25。C, unless otherwise specified)

STATIC CHARACTERISTICS

Symbol	Parameter	Test Condition	Quadrant	Value			Unit
Symbol	Parameter	Test Condition	Quadrant	MIN	TYPE	MAX	Unit
IGT	Gate trigger current	VD= 12V, IT=0. 1A	Ⅰ-Ⅱ-Ⅲ	-	-	10	mA
		VD= 12V, IT=0. 1A		-	0.7	1.5
VGT	Gate trigger voltage	VD=400V, IT=0. 1A,Tj= 125°C		0.25	0.4	-	V
VT	On-state voltage	IT=20A		-	1.2	1.5	V
IH	Holding current	VD= 12V, IGT=0. 1A	Ⅰ-Ⅱ-Ⅲ	-	-		mA
			Ⅰ-Ⅲ	-	-	60	mA
IL	Latching current	VD= 12V, IGT=0. 1A	Ⅱ	-	-	90	mA
ID	Off-state leakage current	VD = VDRM(max); Tj= 125 ˚C		-	0.1	0.5	mA

DYNAMIC CHARACTERISTICS

Symbol	Parameter	Test Condition	Value		Unit
			MIN	TYPE
dVD/dt	Critical rate of rise of off- state voltage	VDM = 67% VDRM(max); Tj = 125 ˚C	1000	4000	V/us
		exponential waveform; gate open circuit
dIcom/dt	Critical rate of change of commutating current	VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 16A; without snubber; gate open circuit		28	A/ms
T	Gate controlled turn-on time	ITM = 20 A; VD = VDRM(max) ; IG = 0. 1 A; dIG/dt = 5 A/µs		2	us
tgt