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Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > TO-220F BTA216X-600B Triac have good performance at dv/dt and reliability
TO-220F BTA216X-600B Triac have good performance at dv/dt and reliability
TO-220F BTA216X-600B Triac have good performance at dv/dt and reliability
TO-220F BTA216X-600B Triac have good performance at dv/dt and reliability
TO-220F BTA216X-600B Triac have good performance at dv/dt and reliability
TO-220F BTA216X-600B Triac have good performance at dv/dt and reliability
  • TO-220F BTA216X-600B Triac have good performance at dv/dt and reliability
  • TO-220F BTA216X-600B Triac have good performance at dv/dt and reliability
  • TO-220F BTA216X-600B Triac have good performance at dv/dt and reliability
  • TO-220F BTA216X-600B Triac have good performance at dv/dt and reliability
  • TO-220F BTA216X-600B Triac have good performance at dv/dt and reliability

TO-220F BTA216X-600B Triac have good performance at dv/dt and reliability

    Unit Price: USD 0.13 - 0.16 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-BTA216X-600B

BrandYZPST

Place Of OriginChina

IT(RMS)16A

VDRM600V

VRRM600V

I2t98A2S

Di/dt100A/μs

IGM2A

VGM5W

PGM5W

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000000

TransportationOcean,Land,Express,Others

Place of OriginCHINA

Supply Ability1000000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

BTA216X-600B TRIACS
DESRCRIPTION:
Due to separation glass passivation, these devices have good
performance at dv/dt and reliability. The Triac series is suitable for
general purpose AC switching. They can be used as an On-Off
function in the applications such as static relays, heating regulation,
or for phase control operation in light dimmers, motor speed

controllers.

YZPST-BTA216X-600B

MAIN FEATURES

Symbol

Value

Unit

IT(RMS)

16

A

VDRM/VRRM

600

V

IGT

10

mA

ABSOLUTE MAX I MUM RATINGS

Symbol PARAMETER Value Unit
IT(RMS) RMS on-state current(full sine wave) TO-220.Non-Ins TC99℃ 16 A
Non repetitive surge peak on-state current t=20ms 140
ITSM (full sine wave, Tj=25℃) t= 16.7ms 150 A
I2t I2t Value for fusing t= 10ms 98 A2S
di/dt Repetitive rate of rise of on-state Current after triggering ITM  = 20 A; IG = 0.2 A dIG/dt = 0.2 A/us 100 A/μs
IGM Peak gate current, 2 A
VGM Peak gate voltage 5 W
PGM Peak gate power 5 W
PG(AV) Average gate power over any 20 ms period 0.5 W
Tstg Storage junction temperature range -40 to +150
Tj Operating junction temperature range 125

ELECTRICAL CHARACTERISTICS (Tj = 25。C, unless otherwise specified)

STATIC CHARACTERISTICS

Symbol Parameter Test Condition Quadrant Value Unit
MIN TYPE MAX
IGT Gate trigger current VD= 12V, IT=0. 1A Ⅰ-Ⅱ-Ⅲ - - 10 mA
VD= 12V, IT=0. 1A - 0.7 1.5
VGT Gate trigger voltage VD=400V, IT=0. 1A,Tj= 125°C 0.25 0.4 - V
VT On-state voltage IT=20A - 1.2 1.5 V
IH Holding current VD= 12V, IGT=0. 1A Ⅰ-Ⅱ-Ⅲ - - mA
Ⅰ-Ⅲ - - 60 mA
IL Latching current VD= 12V, IGT=0. 1A - - 90 mA
ID Off-state leakage current VD = VDRM(max); Tj= 125 ˚C - 0.1 0.5 mA

DYNAMIC CHARACTERISTICS

Symbol Parameter Test Condition Value Unit
MIN TYPE
dVD/dt Critical rate of rise of off- state voltage VDM  = 67% VDRM(max); Tj = 125 ˚C 1000 4000 V/us
exponential waveform; gate open circuit
dIcom/dt Critical rate of change of commutating current VDM  = 400 V; Tj = 125 ˚C; IT(RMS)  = 16A; without snubber; gate open circuit 28 A/ms
T Gate controlled turn-on time ITM  = 20 A; VD = VDRM(max) ; IG  = 0. 1 A; dIG/dt = 5 A/µs 2 us
tgt

PACKAGE MECHANICAL DATA

YZPST-BTA216X-600B TO-220F



Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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