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Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > High commutation performances 6A BTA06 600SW Triac T0-220
High commutation performances 6A BTA06 600SW Triac T0-220
High commutation performances 6A BTA06 600SW Triac T0-220
High commutation performances 6A BTA06 600SW Triac T0-220
High commutation performances 6A BTA06 600SW Triac T0-220
High commutation performances 6A BTA06 600SW Triac T0-220
  • High commutation performances 6A BTA06 600SW Triac T0-220
  • High commutation performances 6A BTA06 600SW Triac T0-220
  • High commutation performances 6A BTA06 600SW Triac T0-220
  • High commutation performances 6A BTA06 600SW Triac T0-220
  • High commutation performances 6A BTA06 600SW Triac T0-220

High commutation performances 6A BTA06 600SW Triac T0-220

    Unit Price: USD 0.09 - 0.11 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-BTA06-600SW

BrandYZPST

Place Of OriginChina

IT(RMS)6A

VDRM/VRRM600/800V

VTM≤1.5V

Tstg-40~150℃

ITSM60A

I2 T18A 2s

DI/dt50A/μs

Additional Info

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity100000000

TransportationOcean,Land,Others

Place of OriginCHINA

Supply Ability10000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

YZPST-BTA06-600SW

High commutation performances 6A BTA06 600SW Triac T0-220

BTA06/BTB06 Series 6A Triacs

DESCRIPTION:
With high ability to withstand the shock loading of Large current, BTA06/BTB06 series triacs provide high dv/dt rate with strong resistance to electromagnetic interface.
With high commutation performances, 3 quadrants products especially recommended for use on inductive load. From all three terminals to external heatsink, BTA06 provides a rated insulation voltage of 2500 VRMS complying with UL standards

TO-220A


MAIN FEATURES:

symbol

value

unit

IT(RMS)

6

A

VDRM/VRRM

600/800

V

VTM

≤ 1.5

V

ABSOLUTE MAXIMUM RATINGS:

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40~150

C

Operating junction temperature range

Tj

-40~125

C

Repetitive peak off-state voltage (Tj=25C)

VDRM

600/800

V

Repetitive peak reverse voltage (Tj=25C)

VRRM

600/800

V

RMS on-state current

IT(RMS)

6

A

Non repetitive surge peak on-state current

(full cycle, F=50Hz)

 

ITSM

 

60

 

A

PRODUCT DATA SHEET

I2t value for fusing (tp=10ms)

I2t

18

A2s

Critical rate of rise of on-state current(IG=2× IGT)

dI/dt

50

A/μs

Peak gate current

IGM

2

A

Average gate power dissipation

PG(AV)

1

W

Peak gate power

PGM

5

W

ELECTRICAL CHARACTERISTICS (Tj=25C unless otherwise specified)

3 Quadrants

Parameter Value
Test Condition Quadrant TW SW CW BW Unit
IGT VD=12V, 5 10 35 50 mA
VGT RL=33Ω - - MAX 1.5 V
VGD VD=VDRM - - MIN 0 2 V
IH IT=100mA MAX 6 10 35 60 mA
- 10 15 50 70 mA
IL IG=1.2IGT MAX 15 25 60 80 mA
VD=2/3VDRM   Tj=125C Gate open
dV/dt MIN 50 100 500 1000 Vs

4 Quadrants

Parameter Value
Test Condition Quadrant C B Unit
- - 25 50 mA
IGT VD=12V, 50 70 mA
VGT RL=33Ω ALL MAX 1.5 V
VGD VD=VDRM ALL MIN 0.2 V
IH IT=100mA MAX 40 60 mA
IL IG=1.2IGT --  MAX 50 70 mA

THERMAL RESISTANCES

Symbol Test Condition Value Unit
Rth(j-c) junction to case(AC) TO-251-4R/ TO-252-4R 2.8 C/W
TO-220A(Ins) 3.4
TO-220B(Non-Ins) 2.2
TO-220F(Ins) 3.2

TO-220A Ins

Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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