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Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > Higher System Efficiency N-Channel SiC MOSFET TO247-4L
Higher System Efficiency N-Channel SiC MOSFET TO247-4L
Higher System Efficiency N-Channel SiC MOSFET TO247-4L
Higher System Efficiency N-Channel SiC MOSFET TO247-4L
Higher System Efficiency N-Channel SiC MOSFET TO247-4L
  • Higher System Efficiency N-Channel SiC MOSFET TO247-4L
  • Higher System Efficiency N-Channel SiC MOSFET TO247-4L
  • Higher System Efficiency N-Channel SiC MOSFET TO247-4L
  • Higher System Efficiency N-Channel SiC MOSFET TO247-4L

Higher System Efficiency N-Channel SiC MOSFET TO247-4L

    Unit Price: USD 32 - 36 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF

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Basic Info

Model No.YZPST-M2A016120L

BrandYZPST

Place Of OriginChina

VDSmax1200V

VGSmax-8/+22V

VGSop-4/+18V

ID Tc=25℃115A

ID Tc=100℃76A

ID(pulse)250A

PD582W

TJ, TSTG-55 to +175℃

Additional Info

Productivity100000

TransportationOcean,Land

Place of OriginCHINA

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Product Description

N-Channel SiC Power MOSFET   P/N: YZPST-M2A016120L SiC MOSFET

Features

 High Blocking Voltage with Low On-Resistance

 High Speed Switching with Low Capacitance

 Easy to Parallel and Simple to Drive

Benefits

 Higher System Efficiency

 Reduced Cooling Requirements

 Increased Power Density

 Increased System Switching Frequency

Applications

 Renewable Energy

 EV Battery Chargers

 High Voltage DC/DC Converters

 Switch Mode Power Supplies

Package

Package


Part Number

Package

M2A016120L

TO-247-4

Maximum Ratings (TC=25℃ unless otherwise specified)

Symbol Parameter Value Unit Test Conditions Note
VDSmax Drain-Source Voltage 1200 V VGS=0V, ID=100μA
VGSmax Gate-Source Voltage -8/+22 V Absolute maximum values
VGSop Gate-Source Voltage

-4/+18

V Recommended operational values
ID Continuous Drain Current 115 A VGS=18V, Tc=25
76 VGS=18V, Tc=100
ID(pulse) Pulsed Drain Current 250 A Pulse width tp  limited by TJmax
PD Power Dissipation 582 W Tc=25, TJ=175
TJ, TSTG Operating Junction and Storage Temperature -55 to +175
Electrical Characteristics (TC=25℃ unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-Source Breakdown Voltage 1200 / / V VGS=0V, ID=100μA
VGS(th) Gate Threshold Voltage 1.9 2.6 4 V VDS=VGS, ID=23mA
/ 1.8 / VDS=VGS, ID=23mA, TJ=175
IDSS Zero Gate Voltage Drain Current / 1 100 µA VDS=1200V, VGS=0V
IGSS+ Gate-Source Leakage Current / 10 250 nA VDS=0V, VGS=22V
IGSS- Gate-Source Leakage Current / 10 250 nA VDS=0V, VGS=-8V
RDS(on) Drain-Source On-State Resistance / 16 21 VGS=18V, ID=75A
/ 28 / VGS=18V, ID=75A, TJ=175
gfs Transconductance / 40.5 / S VDS=20V, ID=75A
/ 37 / VDS=20V, ID=75A, TJ=175
Ciss Input Capacitance / 4300 / VGS=0V
Coss Output Capacitance / 236 / pF VDS=1000V
Crss Reverse Transfer Capacitance / 35 / f=1MHz
Eoss Coss Stored Energy / 136 / µJ VAC=25mV
EON Turn-On Switching Energy / 2.1 / µJ VDS=800V, VGS=-4V/18V
EOFF Turn-Off Switching Energy / 1.6 / ID=40A, RG(ext)=2.5Ω, L=100μH
td(on) Turn-On Delay Time / 150 /
tr Rise Time / 38 / VDS=800V, VGS=-4V/18V, ID=40A RG(ext)=2.5Ω, RL=20Ω
td(off) Turn-Off Delay Time / 108 / ns
tf Fall Time / 35 /
RG(int) Internal Gate Resistance / 2.3 / Ω f=1MHz, VAC=25mV
QGS Gate to Source Charge / 60 / VDS=800V
QGD Gate to Drain Charge / 44 / nC VGS=-4V/18V
QG Total Gate Charge / 242 / ID=40A


Package Dimensions

Package Dimensions


Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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