| Unit Price: | USD 0.13 - 0.15 / Piece/Pieces |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
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Basic Info
Model No.: YZPST-BTB16-600B
Brand: YZPST
Place Of Origin: China
IT(RMS): 16A
VDRM: 600V
VRRM: 600V
VTM: ≤ 1.5v
Tstg: -40~150℃
Tj: -40~125℃
ITSM: 160A
I2t: 128A2s
DI/dt: 50A/μs
Additional Info
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 100000000
Transportation: Ocean,Land,Others
Place of Origin: CHINA
Supply Ability: 100000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Product Description
YZPST-BTB16-600B 600V BTB16-600B 16A Triac
BTA16/BTB16 (BT139) Series16ATriacs
DESCRIPTION:
With high ability to withstand the shock loading of Large current, BTA16/BTB16 series triacs provide high dv/dt rate with strong resistance to electromagnetic interface.
With high commutation performances, 3 quadrantsproducts especially recommended for use on inductive load. From all three terminals to external heatsink, BTA16 provides a rated insulation voltage of 2500 VRMS complying with UL standards
MAIN FEATURES:
| symbol | value | unit |
| IT(RMS) | 16 | A |
| VDRM/VRRM | 600/800/ 1200 | V |
| VTM | ≤ 1.5 | V |
ABSOLUTE MAXIMUM RATINGS:
| Parameter | Symbol | Value | Unit |
| Storage junction temperature range | Tstg | -40~150 | ℃ |
| Operating junction temperature range | Tj | -40~125 | ℃ |
| Repetitive peak off-state voltage (Tj=25C) | VDRM | 600/800/ 1200 | V |
| Repetitive peak reverse voltage (Tj=25C) | VRRM | 600/800/ 1200 | V |
| RMS on-state current | IT(RMS) | 16 | A |
| Non repetitive surge peak on-state current (full cycle, F=50Hz) | ITSM
| 160
| A
|
| I2t value for fusing (tp=10ms) | I2t | 128 | A2s |
| Critical rate of rise of on-state current(IG=2× IGT) | dI/dt | 50 | A/μs |
| Peak gate current | IGM | 4 | A |
| Average gate power dissipation | PG(AV) | 1 | W |
| Peak gate power | PGM | 5 | W |
ELECTRICAL CHARACTERISTICS (Tj=25C unless otherwise specified)
3 Quadrants：
Parameter Value Test Condition Quadrant TW SW CW BW Unit IGT VD=12V, 5 10 35 50 A VGT RL=33Ω Ⅰ- Ⅱ-Ⅲ MAX 1.3 V VGD VD=VDRM Ⅰ- Ⅱ-Ⅲ MIN 0 2 V IH IT=100mA MAX 15 25 40 60 A Ⅰ-Ⅲ 20 30 50 70 m IL IG=1.2IGT Ⅱ MAX 25 40 60 90 A VD=2/3VDRM Tj=125C Gate open dV/dt MIN 100 200 500 1000 V/µs
4 Quadrants：
| Parameter | Value | |||||
| Test Condition | Quadrant | C | B | Unit | ||
| Ⅰ- Ⅱ-Ⅲ | 25 | 50 | A | |||
| IGT | VD=12V, | Ⅳ | 50 | 70 | A | |
| VGT | RL=33Ω | ALL | MAX | 1.5 | V | |
| VGD | VD=VDRM | ALL | MIN | 0.2 | V | |
| IH | IT=100mA | MAX | 40 | 60 | A | |
| Ⅰ-Ⅲ- Ⅳ | 50 | 70 | m | |||
| IL | IG=1.2IGT | Ⅱ | MAX | 70 | 90 | A |
| VD=2/3VDRM Tj=125C Gate open | ||||||
| dV/dt | MIN | 200 | 500 | V/µs | ||
STATIC CHARACTERISTICS
| Symbol | Test Condition | Value | Unit | ||
| VTM | ITM=22.5A tp=380μs | Tj=25C | MAX | 1.5 | V |
| IDRM | Tj=25C | 5 | A | ||
| IRRM | VDRM= VRRM | Tj=125C | MAX | 1 | A |
THERMAL RESISTANCES
| Symbol | Test Condition | Value | Unit | |
| Rth(j-c) | TO-220A(Ins) | 2.1 | ℃/W | |
| TO-220B(Non-Ins) | 1.3 | |||
| TO-220F(Ins) | 2.3 | |||
| junction to case(AC) | TO-263 | 2.4 | ||
Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)
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